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2600 G 3 HT MOCVD Reactorversus0010-13622 RF Match for

Aixtron 2600 G 3 HT MOCVD Reactor, Applied Materials 0010-13622 RF Match for, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
0010-13622 RF Match forApplied Materials
OEMAixtronApplied Materials
CategoryDepositionDeposition
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyAixtron AIX 2600Applied Materials 0010-13622 RF Match for
Specifications
Software VersionCACE 3.5.0286[1]—
PLC3.7[1]—
SLC2.01[1]—
ProcessAllnGaP MOCVD Epitaxy[1]—
Wafer7 x 6"[1]—
Metal Organic SourcesTMIn x 3, TMGa x 2, TMAI x 1, Cp2Mg x 1, DIPTe x 1, CBr4 x 1[1]—
Hydride SourcesPH 3 x 1, AsH3 x 1, 100 ppm SiH4 in Ar x 1[1]—
Concentration MonitorsEpisons 5 x 3 for TMIn[1]—
ConfigurationChiller Baths[1]High Efficiency HE RF Match-Bias[3]
PurifiersEntegris Getter for H2 & N2[1]—
FiltersEntegris Filtersfor AsH3 & Ph3[1]—
Heating SystemRF Coil with Trumpf Huttinger RF Generator BIG 120/50[1]—
Glove BoxMBraun Nitrogen Glovebox with Controller[1]—
Process PumpKashiyama SDE 300[1]—
DOR & Glove Box PumpsAdixen ACP - 15G x 2[1]—
Reactor ChillerAffinity Recirculating Closed Loop Chiller[1]—
SoftwareCACE 3.5.0284[2]—
Gas Foil Rotation (GFR)Active[1]—
Model—0010-13622[3]
Product Type—RF Match for PVD (Physical Vapor Deposition)[3]
Feature—High Efficiency HE RF Match-Bias[3]

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Sources (3)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]inventory listing
  3. [3]inventory listing