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2600 G 3 IC R MOCVD Reactorversus0010-13622 RF Match for

Aixtron 2600 G 3 IC R MOCVD Reactor, Applied Materials 0010-13622 RF Match for, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
0010-13622 RF Match forApplied Materials
OEMAixtronApplied Materials
CategoryDepositionDeposition
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyAixtron AIX 2600Applied Materials 0010-13622 RF Match for
Specifications
Software VersionAiIXACT 5.8.3.16[1]—
PLC3.1.3[1]—
ConfigurationSLC[1]High Efficiency HE RF Match-Bias[2]
ProcessAlInGaP MOCVD Epitaxy[1]—
Wafer7 x 6"[1]—
Metal Organic SourcesTMIn x 3, TMGa x 2, TMAl x 1, Cp2Mg x 1, DIPTe x 1, Spare x 3[1]—
Hydride SourcesPH3 x 1, AsH3 x 1, 100 ppm SiH4 in Ar x 1[1]—
Concentration MonitorsEpison4 x 3 for TMIn[1]—
PurifiersEntegris Getter for H2[1]—
Heating SystemRF Coil with Trumpf Huttinger RF Generator BIG 120/50[1]—
Glove BoxMBraun Nitrogen Glovebox with Controller[1]—
Process PumpKashiyama SDE 300[1]—
DOR & Glove Box PumpsAdixen ACP - 15G x 2[1]—
Reactor ChillerAffinity Recirculating Closed Loop Chiller[1]—
MakeAixtron[1]—
Model2600 G 3 IC R[1]0010-13622[2]
Equipment typeMOCVD Reactor[1]—
SLClisted[1]—
Quartz Ceilingwith Temperature Control[1]—
In-Situ Pyrometryavailable[1]—
Gas Foil Rotation (GFR)Active[1]—
Vintage2007[1]—
Product Type—RF Match for PVD (Physical Vapor Deposition)[2]
Feature—High Efficiency HE RF Match-Bias[2]

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Sources (2)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]inventory listing