Comparison ledger
Aixtron G 5 WW C SiC Epitaxy Reactor, Applied Materials 0020 18455 Part, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | G 5 WW C SiC Epitaxy ReactorAixtron | 0020 18455 PartApplied Materials |
|---|---|---|
| OEM | Aixtron | Applied Materials |
| Category | Deposition | Deposition |
| Wafer size | Wafer transfer module | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Aixtron G 5 WW C SiC Epitaxy Reactor | Applied Materials 0020 18455 Part |
| Specifications | ||
| Phase | 3 Phase[1] | — |
| Configuration | 4 Wire + Ground[1] | Shaft,Rf In Local Match, Hdpcvd,Rev3[2] |
| Voltage | 208V / 120V AC[1] | — |
| Frequency | 60 Hz[1] | — |
| Wafer size | Wafer transfer module[1] | — |
Plan your fab
Building a Deposition process? Get a complete equipment list.
Open the fab equipment planner →