Comparison ledger
Angstrom Engineering EvoVac, Applied Materials 0010-13622 RF Match for, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | EvoVacAngstrom Engineering | 0010-13622 RF Match forApplied Materials |
|---|---|---|
| OEM | Angstrom Engineering | Applied Materials |
| Category | Deposition | Deposition |
| Wafer size | 6 in | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Angstrom Engineering EvoVac | Applied Materials 0010-13622 RF Match for |
| Specifications | ||
| Tool type | Load-locked PVD tool[1] | — |
| Primary process | Electron beam evaporation[1] | — |
| Additional deposition modes | Resistive thermal evaporation, ion assisted deposition, and sputter deposition[1] | — |
| Wafer size | Wafers to 6 in[1] | — |
| E-beam source | 6 pocket E-beam source[1] | — |
| Crucible volume | 15 cc crucibles[1] | — |
| Sweep controller | Programmable 2-axis sweep controller[1] | — |
| Deposition control | Advanced multi-layer deposition control for precise layer monitoring[1] | — |
| Source-to-substrate distance | Long source to substrate distances[1] | — |
| Ion source | Kaufman gridless ion source[1] | — |
| In-situ functions | In-situ substrate pre-cleaning, low energy ion beam etching, and surface modification[1] | — |
| Load locked | yes[1] | — |
| E-beam source pockets | 6[1] | — |
| Crucible capacity | 15 cc[1] | — |
| Maximum wafer size | 6 inches[1] | — |
| Deposition rate | high[1] | — |
| Multi-layer deposition control | advanced[1] | — |
| Ion source type | Kaufman gridless[1] | — |
| In-situ substrate pre-cleaning | yes[1] | — |
| Low energy ion beam etching | yes[1] | — |
| Surface modification | yes[1] | — |
| Pneumatic airline filter | yes[1] | — |
| Configuration | — | High Efficiency HE RF Match-Bias[2] |
| Model | — | 0010-13622[2] |
| Product Type | — | RF Match for PVD (Physical Vapor Deposition)[2] |
| Feature | — | High Efficiency HE RF Match-Bias[2] |
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