Comparison ledger
Applied Materials 0010-13622 RF Match for, Lam Research Concept One 200 PECVD-TEOS, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-13622 RF Match forApplied Materials | Concept One 200 PECVD-TEOSLam Research |
|---|---|---|
| OEM | Applied Materials | Lam Research |
| Category | Deposition | Deposition |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-13622 RF Match for | Lam Research Concept One 200 |
| Specifications | ||
| Configuration | High Efficiency HE RF Match-Bias[1] | 208 Volts AC[2] |
| Model | 0010-13622[1] | Concept One 200[2] |
| Product Type | RF Match for PVD (Physical Vapor Deposition)[1] | — |
| Feature | High Efficiency HE RF Match-Bias[1] | — |
| Phase | — | 3 Phase[2] |
| Make | — | Lam / Novellus[2] |
| Process | — | PECVD-TEOS (Plasma-Enhanced Chemical Vapor Deposition - Tetraethyl Orthosilicate)[2] |
| Wafer Sizes | — | 8 inch[3] |
| Process description | — | 8" CCP/SiO, SiN[3] |
| Electrical | — | 208 Volts AC, 3 Phase, 50/60 Hz[2] |
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