Comparison ledger
Applied Materials 0010-13622 RF Match for, Oxford Instruments 800, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-13622 RF Match forApplied Materials | 800Oxford Instruments |
|---|---|---|
| OEM | Applied Materials | Oxford Instruments |
| Category | Deposition | Deposition |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-13622 RF Match for | Oxford Instruments 800 |
| Cited variants | — |
|
| Specifications | ||
| Configuration | High Efficiency HE RF Match-Bias[2] | — |
| Model | 0010-13622[2] | — |
| Product Type | RF Match for PVD (Physical Vapor Deposition)[2] | — |
| Feature | High Efficiency HE RF Match-Bias[2] | — |
| Table diameter | — | 380 mm or 460 mm[1] |
| Wafer capacity (300 mm) | — | 1[1] |
| Process configurations | — | PECVD, RIE, RIE/PE dual mode, ICP[1] |
| Substrate temperature range | — | up to 400 °C[1] |
| Cryogenic temperature option | — | down to -150 °C[1] |
| End-point detection | — | Laser interferometry or optical emission spectrometry (OES)[1] |
| Gas line options | — | 4, 8, or 12 lines[1] |
| RF frequency | — | 13.56 MHz[3] |
| Low frequency range | — | 100–350 kHz[3] |
| Deposition rate (SiNx, NH3-free process) | — | up to 20 nm/min[3] |
| Process gases | — | SiH4, NH3, N2O, CH4, N2, Ar, He, CF4, O2[3] |
| Mains power | — | 50/60 Hz[3] |
| Stress control | — | Pulsed HF/LF power mixing[3] |
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