Waferpedia

Comparison ledger

0010-21246 PartversusNanospec 3000

Applied Materials 0010-21246 Part, Onto Innovation Nanospec 3000, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
0010-21246 PartApplied Materials
Nanospec 3000Onto Innovation
OEMApplied MaterialsOnto Innovation
Category——
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
Family—Onto Innovation Nanospec 3000
Specifications
Wavelength range—480-800 nm[1]
Wavelength range (alternative)—400-800 nm[2]
Film thickness range—250 A to 35 µm[1]
Film thickness range (alternative)—100A up to 20um (resolution 50A)[2]
Maximum film thickness—30µm[2]
Measurement spot size—25 µm[1]
Measurement spot size (alternative)—25um, down to 100nm at 40X objective[2]
Measurement time—0.25 s to 4 s / site[1]
Measurement time (alternative)—less than 3 seconds[2]
Number of layers—3[1]
Number of layers (alternative)—up to 3 films[2]
Detector—Linear diode array detector[1]
Reproducibility—<2 A[1]
Wafer size—3"-6"[1]
Wafer size (alternative)—up to 6"/150mm[2]
Objective magnifications—5X, 10X (default), 50X[3]
Spot size per objective—5X: 50 µm; 10X: 25 µm; 50X: 5 µm[3]
Sources (3)Every fact above is drawn from these public sources
  1. [1]tech-semi.comtech-semi.com
  2. [2]semistarcorp.comsemistarcorp.com
  3. [3]nanofab.utah.edunanofab.utah.edu