Comparison ledger
Applied Materials 0010 47763, Oxford Instruments Plasmalab80, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010 47763Applied Materials | Plasmalab80Oxford Instruments |
|---|---|---|
| OEM | Applied Materials | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | — | up to 8-inch diameter wafers |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010 47763 | Oxford Instruments Plasmalab80 |
| Specifications | ||
| Configuration | 2nd Source New[1] | — |
| Type | Monopolar Dual Heated[2] | — |
| Description | ASSY, ESC, BONDED, MONOPOLAR DUAL HEATED[3] | — |
| Possible Materials | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[2] | — |
| Model | 0010-47763[1] | — |
| OEM | Applied Materials[1] | — |
| Material (possible) | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[2] | — |
| Application | Fixing wafers in etching process (PVD, CVD, ETCH)[2] | — |
| Quantity available (source) | 1[2] | — |
| Etch and deposition capabilities | — | Combined etch and deposition tool[4] |
| Etch processes | — | Bosch (gas chopping) or cryo processes[4] |
| Deposition materials | — | Silicon dioxide, silicon nitride, or mixed oxynitrides[4] |
| Wafer diameter | — | Up to 8-inch wafers[4] |
| Active etch/deposition region | — | Center 4 inches of the chamber[4] |
| Available gases | — | N2, N2O, O2, SF6, Ar (max flow 100 sccm); C4F8, SiH4, CH4 (max flow 20 sccm)[4] |
| Power | — | 300 W RF and 300 W ICP[4] |
| Process pressure | — | 4 to 100 mTorr[4] |
| Substrate temperature | — | -150 to 200 C[4] |
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