Comparison ledger
Applied Materials 0010 47763, Plasma-Therm Shuttleline ICP, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010 47763Applied Materials | Shuttleline ICPPlasma-Therm |
|---|---|---|
| OEM | Applied Materials | Plasma-Therm |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010 47763 | Plasma-Therm Shuttleline ICP |
| Specifications | ||
| Configuration | 2nd Source New[1] | Etched III-V materials[4] |
| Type | Monopolar Dual Heated[2] | — |
| Description | ASSY, ESC, BONDED, MONOPOLAR DUAL HEATED[3] | — |
| Possible Materials | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[2] | — |
| Model | 0010-47763[1] | — |
| OEM | Applied Materials[1] | — |
| Material (possible) | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[2] | — |
| Application | Fixing wafers in etching process (PVD, CVD, ETCH)[2] | — |
| Quantity available (source) | 1[2] | — |
| Wafer Size | — | 6 inch[4] |
| Etched Materials | — | III-V materials[4] |
| External pumps and chiller | — | Not included[4] |
| Tool type | — | Inductively coupled plasma etcher[4] |
| Process material | — | III-V materials[4] |
| Vacuum & pumping | — | External pumps and chiller not included[5] |
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