Waferpedia

Comparison ledger

0010 47763versusTE 8401 Poly

Applied Materials 0010 47763, Tokyo Electron TE 8401 Poly, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
0010 47763Applied Materials
TE 8401 PolyTokyo Electron
OEMApplied MaterialsTokyo Electron
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials 0010 47763Tokyo Electron TE 8401
Cited variants—
  • TE 8401 (poly etch configuration)[1]
  • TE 8401 (nitride etch configuration)[1]
Specifications
Configuration2nd Source New[2]Single chamber[5]
TypeMonopolar Dual Heated[3]—
DescriptionASSY, ESC, BONDED, MONOPOLAR DUAL HEATED[4]—
Possible MaterialsAl2O3 (aluminum oxide) or AlN (aluminum nitride)[3]—
Model0010-47763[2]TE 8401 Poly[5]
OEMApplied Materials[2]—
Material (possible)Al2O3 (aluminum oxide) or AlN (aluminum nitride)[3]—
ApplicationFixing wafers in etching process (PVD, CVD, ETCH)[3]—
Quantity available (source)1[3]—
LD—2 each[5]
Gas—He, O2, CF4, HBr, CL2[5]
OS—EPROM based system[5]
Manufacturer—Tokyo Electron[5]
Pumps—2[5]
Gas delivery—He, O2, CF4, HBr, CL2[5]
Vintage—1998[5]
Wafer size—8-inch wafers[1]

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Sources (5)Every fact above is drawn from these public sources
  1. [1]waferpedia.comwaferpedia.com
  2. [2]inventory listing
  3. [3]saulcontrol.comsaulcontrol.com
  4. [4]getspares.comgetspares.com
  5. [5]inventory listing