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0020 17485 PartversusVersaline

Applied Materials 0020 17485 Part, Plasma-Therm Versaline, side by side. Every value shown is drawn from the cited encyclopedia entries.

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Side-by-side comparison of selected equipment models
Attribute
0020 17485 PartApplied Materials
VersalinePlasma-Therm
OEMApplied MaterialsPlasma-Therm
CategoryDepositionDeposition
Wafer size—4"
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials 0020 17485 PartPlasma-Therm Versaline
Cited variants—
  • Versaline PECVD[1]
  • Versaline CVD[2]
  • Plasmatherm Versaline CVD[2]
  • Plasma Therm Versaline LL ICP Deep Silicon Etcher (PT-DSE)[3]
  • Plasma Therm Versaline LL ICP Dielectric Etcher (PT-Ox)[3]
  • Plasma Therm Versaline LL ICP Metal Etcher (PT-MTL)[3]
Specifications
ConfigurationStrap, RF Out 2 Balanced Coil Match, Hdp[4]3 Chamber Deposition[2]
ICP source—1 kW 2 MHz[5]
Wafer size—up to 4 inches[5]
Plasma generators—500 W, 13.56 MHz[5]
He-back-side cooling—Yes[5]
Processable materials—Silicon, SiO2, Si3N4, SiOxNy, polymer films such as PMMA, photoresist, polyimide[5]
Process types—PECVD, CVD, DRIE, ICP etching[1]
Number of deposition chambers—3 (2 PCVD Versaline chambers, 1 HDP-CVD Versaline chamber)[2]
Silicon etch selectivity to photoresist—100:1[6]
Silicon etch selectivity to SiO2—340:1[6]
Silicon etch selectivity to Al2O3—1000:1[6]
Trench aspect ratio—50:1[6]
Isolated line aspect ratio—200:1[6]
Endpoint detection—Optical emission spectroscopy (OES) for SOI[6]
PECVD Capability—Yes[1]
CVD Capability—Yes, 3 chamber deposition[2]
Chambers—PCVD Versaline Chambers (x2), HDP-CVD Versaline Chamber[2]
Additional Hardware—PM Modules (x3), Brooks MX 600, HDD, Versaline Software, Manuals[2]
Etch Capability—DRIE of silicon[6]
Etch Selectivity to Photoresist—100:1[6]
Etch Selectivity to SiO2—As high as 340:1[6]
Etch Selectivity to Al2O3—Approximately 1000:1[6]
Achievable Trench Aspect Ratio—Up to 50:1[6]
Achievable Isolated Line Aspect Ratio—200:1[6]
Endpoint Detection—Optical emission spectroscopy (OES) for SOI endpoint detection[6]
Substrate Compatibility—Silicon, Germanium[6]
Etch Masks—Photoresists, ebeam resists, silicon oxide, ALD Al2O3[6]
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Sources (6)Every fact above is drawn from these public sources
  1. [1]Equipment inventory listing
  2. [2]Equipment inventory listing
  3. [3]snfguide.stanford.edusnfguide.stanford.edu
  4. [4]inventory listing
  5. [5]pnf.uchicago.edupnf.uchicago.edu
  6. [6]cnfusers.cornell.educnfusers.cornell.edu