Comparison ledger
Applied Materials 0020 18455 Part, Tokyo Electron NT 333, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0020 18455 PartApplied Materials | NT 333Tokyo Electron |
|---|---|---|
| OEM | Applied Materials | Tokyo Electron |
| Category | Deposition | Deposition |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0020 18455 Part | Tokyo Electron NT 333 |
| Specifications | ||
| Configuration | Shaft,Rf In Local Match, Hdpcvd,Rev3[1] | — |
| Wafer size (mm) | — | 300[2] |
| Wafer size (inch) | — | 12[3] |
| ALD method | — | Spatial ALD[2] |
| Wafers per chamber | — | 6[2] |
| Wafers per system | — | 12[2] |
| Number of process chambers | — | 2[2] |
| Reactor type | — | Thermal/Plasma[2] |
| Features | — | High step coverage, High quality film, High throughput, Stress controllability, Low plasma damage[2] |
| Processes | — | SiO2, SiN, High-k[2] |
| Substrates | — | Si, SOI[2] |
| OEM | — | Tokyo Electron[3] |
| Model | — | NT 333[3] |
| Process | — | ALD (Atomic Layer Deposition)[3] |
| Wafer size | — | 12 inch[3] |
| Wafer per chamber/system | — | 6/12 wafer[2] |
| Process chamber | — | 2-chamber reactor[2] |
| Processing method | — | Spatial ALD[2] |
| Substrate type | — | Si, SOI[2] |
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