Comparison ledger
Applied Materials 0041-39086 ESC Part, STS Multiplex ASE ICP Deep Silicon, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0041-39086 ESC PartApplied Materials | |
|---|---|---|
| OEM | Applied Materials | STS |
| Category | Etch | Etch |
| Wafer size | — | Manual wafer lock |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | — | STS Multiplex |
| Specifications | ||
| Wafer size | — | Manual wafer lock[1] |
| Configuration | — | Low and high frequency ICP (Inductively Coupled Plasma) etch system.[1] |
| OEM | — | STS[1] |
| Model | — | Multiplex ASE[1] |
| Equipment type | — | Deep Silicon Etcher (Inductively Coupled Plasma)[1] |
| Wafer sizes | — | 6 inch[1] |
| Wafer lock | — | Manual wafer lock[1] |
| Plasma frequency | — | Low and high frequency ICP (Inductively Coupled Plasma)[1] |
| Process description | — | ASE (Advanced Silicon Etch) process consists of alternating cycles of etching and protective polymer deposition[1] |
| Application | — | Deep Si trench etching of a single 6" [150mm] substrate[1] |
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