Waferpedia

Comparison ledger

Centura Avatarversus100 ICP Fluorine

Applied Materials Centura Avatar, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
Centura AvatarApplied Materials
100 ICP FluorineOxford Instruments
OEMApplied MaterialsOxford Instruments
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run2012–—
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials Centura AvatarOxford Instruments 100 ICP Fluorine
Specifications
Etch typedielectric[1]—
Maximum aspect ratio80:1[1]—
Etch Gases—SF6, CF4, O2, Ar, N2, CHF3, C4F8[2]
Cryo DRIE etch rate—up to 5 µm/min[2]
Wafer size—4 inch, 6 inch, 8 inch (with clamp change)[2]

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Sources (2)Every fact above is drawn from these public sources
  1. [1]storagenewsletter.comstoragenewsletter.com
  2. [2]nanofab.utah.edunanofab.utah.edu