Comparison ledger
Applied Materials E 500 EHPI Medium Current, Varian EHPI 500, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | E 500 EHPI Medium CurrentApplied Materials | EHPI 500Varian |
|---|---|---|
| OEM | Applied Materials | Varian |
| Category | Ion Implantation | Ion Implantation |
| Wafer size | Wafer Position Detect | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials E 500 | Varian EHPI 500 |
| Cited variants | — | |
| Specifications | ||
| Loading Configuration | Open Cassette[3] | — |
| Software | V 13.30 rev D[4] | — |
| Floppy Drive Type | 3.5"[4] | — |
| Configuration | CE Mark[4] | Medium Current[5] |
| Energy Range | 10 KeV - 200 KeV[3] | — |
| Solid State Scanner | 30 KV[4] | — |
| Gas Box Type | HP[3] | — |
| Computer Type | Pentium[4] | — |
| OEM | Applied Materials / Varian[4] | Varian[7] |
| Model | E 500 EHPI[3] | EHPI 500[7] |
| Category | Ion Implantation[3] | Ion Implantation[7] |
| Wafer Sizes | 6 inch[4] | — |
| Load Lock Turbo | V 300 HT[4] | — |
| Source Zone Turbo Pump | STP 1000[4] | — |
| Scanner Turbo Pump | STP 1000[4] | — |
| Analyzer Turbo Pump | V 300 HT[4] | — |
| Vacuum Pumps (3) | Edwards QDP 80, QMB 250[4] | — |
| Pump Type | Dry[4] | — |
| Wafer size | Wafer Position Detect[4] | up to 200 mm[2] |
| Wafer size / detect | Wafer Position Detect[3] | — |
| Scanner | Solid State Scanner, 30 KV[4] | — |
| Control interface | GEM/SECS; SECS II Interface[4] | — |
| Tool type | — | Medium current ion implanter[2] |
| Energy range (single charge, X+) | — | 5 – 260 keV[2] |
| Energy range (extended) | — | up to 780 keV[2] |
| Maximum wafer size | — | 200 mm (8 in)[2] |
| Minimum feature size | — | 0.18 µm[2] |
| Throughput | — | Highest industry throughput among medium current implanters (10% higher maximum throughput than previous E-series)[2] |
| Upgrade / Extensions | — | BDM (Beam Drift Monitors)[6] |
| Consumables at end of lifetime | — | source electrode[6] |
| Contamination Known | — | BF3, ASH 3, PH 3[6] |
| Energy range | — | up to 780 keV[2] |
| Throughput increase | — | 10% higher maximum throughput[2] |
| Manufacturer | — | Varian[7] |
| Equipment type | — | Implanter[7] |
| Process class | — | Medium current ion implanter[5] |
| Expanded energy range | — | up to 780 keV[2] |
| Maximum throughput change | — | 10% higher maximum throughputs[2] |
| Feature size capability | — | down to 0.18 micron[2] |
| Wafer size capability | — | up to 200mm[2] |
| Wafer sizes | — | 6 inch[8] |
| Current class | — | Medium Current[8] |
| Feature size | — | down to 0.18 micron[2] |
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