Comparison ledger
Canon MPA 600 Super Mirror Projection Mask, Nikon 1505 G 6 E, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 1505 G 6 ENikon | |
|---|---|---|
| OEM | Canon | Nikon |
| Category | Lithography | Lithography |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | 1988– |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Canon MPA 600 Super Mirror Projection Mask | Nikon 1505 |
| Specifications | ||
| Manufacturer | Canon[1] | — |
| Model | MPA 600 Super[1] | 1505 G 6 E[3] |
| Tool type | Super Mirror Projection Mask Aligner[1] | — |
| Application | mass production of VLSI devices[2] | — |
| Wafer sizes available | 6", 5", and 4"[2] | — |
| Mask sizes available | 7", 6", and 5"[2] | — |
| Illumination | 2KW High Pressure Mercury Lamp[2] | — |
| Intensity | > 600mW / cm2 (6 inch wafer)[2] | — |
| Illumination uniformity | + 3%[2] | — |
| Aperture sizes | 0.7, 0.6, 0.5[2] | — |
| Exposure uniformity | + 3%[2] | — |
| Resolution | 1.5um[2] | 650 nm[4] |
| Depth of focus | > + 6um (linewidth 1.5um)[2] | — |
| Magnification | < 0.2um (PDC ON)[2] | — |
| Distortion | 3sigma < 0.5um (PDC OFF)[2] | — |
| Scanning accuracy | < + 1.5%[2] | — |
| Auto alignment accuracy | LBS AA 3sigma < 0.58um (HeNe laser beam scan); TV AA 3sigma < 0.43um (TV image processing)[2] | — |
| Throughput (6 inch wafer) | > 89 wfs/h (first mask mode); > 77 wfs/h (LBS AA mode); > 68 wfs/h (TVAA mode)[2] | — |
| Auto feeder | Single or double, cassette to cassette, backside wafer handling[2] | — |
| Required facilities | 200 VAC, 3Phase, 6 kVA, 50/60Hz; Air Supply(CTC): 200 VAC, 3Phase, 8 kVA, 50/60Hz; CDA(Clean Dry Air)Pressure: minimum 6.5 kg/cm2, flow rate 130 lit/min; Vacum: 50 cmHg or more; Exhaust Flow(for illuminator): 6.5 m/sec to 9.5 m/sec (measured at illuminator output)[2] | — |
| Configuration | — | 5" reticle[3] |
| Numerical Aperture | — | 0.54[4] |
| Reduction | — | 5x[4] |
| Exposure Field | — | 15 x 15 mm[4] |
| Alignment Accuracy | — | 130 nm[4] |
| Wafer Size | — | 4 inch[3] |
| Light Source | — | g-line[5] |
| Introduction Year | — | 1988[4] |
| NA (Numerical Aperture) | — | 0.54[4] |
| Make | — | Nikon[3] |
| Category | — | Stepper[3] |
| Wafer Sizes | — | 4 inch[3] |
| Exposure type | — | g-line[4] |
| NA | — | 0.54[4] |
| Exposure field | — | 9.3 x 18.8 mm[4] |
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