Comparison ledger
EV Group 6200 NT Semi Automated Bottom Side Alignment, SUSS MicroTec 150 e Mask, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 150 e MaskSUSS MicroTec | |
|---|---|---|
| OEM | EV Group | SUSS MicroTec |
| Category | Lithography | Lithography |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | EV Group 6200 | SUSS MicroTec 150 e Mask |
| Specifications | ||
| Configuration | Double side[1] | — |
| Exposure Modes | Hard, Soft, & Vacuum Contact[1] | — |
| Separation Distance | 0 - 300 µm adjustable via software[1] | — |
| Wafer Thickness | 0.1 - 10 mm (For Top Side)[1] | — |
| OEM | EV Group[1] | — |
| Model | 6200 NT Semi Automated Bottom Side Alignment[1] | — |
| Tool type | Mask alignment system[2] | — |
| Lithography use | Optical double-side lithography[2] | — |
| Wafer/substrate size | Up to 200 mm / 8 inch[2] | — |
| Bottom side alignment | ≤ ± 1.0 µm[2] | — |
| Top side alignment | ≤ ± 0.5 µm[2] | — |
| Exposure source | Mercury light source / UV LED light source[2] | — |
| Exposure setup | Vacuum contact / hard contact / soft contact / proximity mode / flex mode[2] | — |
| Throughput | Up to 180 WPH in first print mode or up to 140 WPH in automatic alignment mode[2] | — |
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