Comparison ledger
GCA 6300 DSW, Karl Suss MA6, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 6300 DSWGCA | MA6Karl Suss |
|---|---|---|
| OEM | GCA | Karl Suss |
| Category | Lithography | Lithography |
| Wafer size | 150mm | 150mm |
| Process node | 5X g-line wafer stepper | 1 micron and better; 0.6 µm under optimum conditions in vacuum mode |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | g-line | i-line |
| Family | GCA 6300 DSW | Karl Suss MA6 |
| Cited variants | ||
| Specifications | ||
| Tool type | 5X g-line wafer stepper[1] | — |
| Exposure wavelength | g-line (436 nm)[1] | — |
| Numerical aperture | 0.30 NA[1] | — |
| Reduction ratio | 5:1[1] | — |
| Variable field size | up to 15 mm square[1] | — |
| Minimum feature size | <0.9 µm[1] | — |
| Wafer accommodation | 3" up to 150 mm; smaller pieces[1] | — |
| Registered alignment | <0.25 µm[1] | — |
| Mask size | 5" x 0.090"-thick masks[1] | — |
| Step and repeat exposure system | laser-controlled stage motion[1] | — |
| Lens | Zeiss lens with 0.30 numerical aperture[1] | — |
| Maximum die size | ~15 mm x 15 mm[2] | — |
| Minimum substrate size | ~10 x 10 mm[2] | — |
| Mask plates | 5x5x0.090 inches[2] | — |
| Lens manufacturer | Zeiss (g-line) / Olympus (i-line)[2] | — |
| Lens numerical aperture | 0.30 (g-line)[1] | — |
| Field size | up to 15 mm square (g-line)[1] | — |
| Resolution | <0.9 µm (g-line)[1] | 0.6 µm under optimum conditions in vacuum mode[5] |
| Alignment accuracy | typically <0.25 µm (g-line)[1] | 0.5 µm (motorized top side alignment)[5] |
| Registration tolerance (global) | max 0.30 µm (i-line)[2] | — |
| Registration tolerance (local, DFAS) | max 0.15 µm (i-line)[2] | — |
| Wafer size | 3" to 150 mm (g-line)[1] | — |
| Light source | 350 W Hg arc lamp (i-line)[2] | Broadband Hg lamp[5] |
| Intensity at wafer | ~180 mW/cm² (i-line)[2] | — |
| Depth of field | 1.2 µm for 0.7 µm process (i-line)[2] | — |
| Stage system | laser-controlled stage motion (g-line)[1] | — |
| Autofocus | yes (i-line)[2] | — |
| Exposure type | step and repeat[1] | — |
| Reduction | 5:1[1] | — |
| Substrate range | — | 5 x 5 mm dies to wafers up to 150 mm[5] |
| Maximum substrate thickness | — | 6 mm[5] |
| Wavelength channels | — | Channel 1 (405 nm) and Channel 2 (365 nm)[5] |
| Wafer chucks available | — | 3, 4, 6 inch[5] |
| Mask holders available | — | 4, 5, 7 inch[5] |
| Top side alignment precision | — | 0.5 µm[5] |
| Objectives | — | 5X, 10X, and 20X[5] |
| Alignment features | — | Splitfield microscope with storage and automatic movement between reference points; Bottom-Side Alignment (BSA); Wedge Error Compensation (WEC)[5] |
| Exposure modes | — | proximity, soft contact, hard contact, and vacuum[5] |
| Microscope objectives | — | 5X, 10X, and 20X[5] |
| Wedge Error Compensation | — | Yes (ensures parallelism between substrate and photomask)[5] |
| Maximum substrate size | — | 150 mm (wafers) or 5x5 mm to 150 mm irregular substrates[5] |
| Resolution (vacuum mode) | — | 0.6 µm (optimum conditions)[5] |
| Bottom-Side Alignment | — | Available (BSA)[5] |
| Resolution (optimum vacuum mode) | — | 0.6 µm[5] |
| Resolution (typical) | — | 1 µm and better[6] |
| Exposure methods | — | flood, proximity, soft contact, hard contact, low vacuum, vacuum[6] |
| Mask sizes | — | 2.5x2.5, 4x4, 5x5, 8x8 inches[6] |
| Wafer size (top-side alignment) | — | up to 6 inches (2, 3, 4, 6 inch)[6] |
| Wafer size (bottom-side alignment) | — | 3 and 4 inch[6] |
| Wavelength range | — | UV broadband 250-450 nm; i-line 365 nm; g-line 436 nm[6] |
| Light source (UIC) | — | Broadband Hg lamp with Channel 1 (405 nm) and Channel 2 (365 nm)[5] |
| Alignment accuracy (motorized top-side) | — | 0.5 µm[5] |
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