Comparison ledger
Heidelberg Instruments MLA150, Karl Suss MA6, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | MLA150Heidelberg Instruments | MA6Karl Suss |
|---|---|---|
| OEM | Heidelberg Instruments | Karl Suss |
| Category | Lithography | Lithography |
| Wafer size | 150mm | 150mm |
| Process node | — | 1 micron and better; 0.6 µm under optimum conditions in vacuum mode |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | i-line |
| Family | Heidelberg Instruments MLA150 | Karl Suss MA6 |
| Cited variants | ||
| Specifications | ||
| OEM | Heidelberg Instruments GmbH[1] | — |
| Machine type | Mask-Less Aligner[1] | — |
| Light source | 405 nm or 375 nm laser diodes[1] | Broadband Hg lamp[7] |
| Exposure area | 150 x 150 mm[1] | — |
| Top-side alignment | Yes[1] | — |
| Backside alignment | Yes[1] | — |
| Real-time autofocus | Yes[1] | — |
| Layout input formats | .gds, .cif, .dxf[1] | — |
| Minimum feature size | about 1 um[1] | — |
| Minimum substrate size | 5 x 5 x 0.1 mm[1] | — |
| Maximum substrate size | 220 x 220 x 8 mm; 200 x 200 x 12 mm[1] | 150 mm (wafers) or 5x5 mm to 150 mm irregular substrates[7] |
| Substrate capacity | up to 8" x 8"[4] | — |
| Exposure time at maximum write speed | 9 minutes for 100 x 100 mm2; 16 minutes for 150 x 150 mm2[4] | — |
| Alignment accuracy | 500 nm[4] | 0.5 µm (motorized top side alignment)[7] |
| Maximum substrate size (MLA150-1) | 220 x 220 x 8 mm[1] | — |
| Maximum substrate size (MLA150-2) | 200 x 200 x 12 mm[1] | — |
| Minimum feature size (source1) | 1 µm[1] | — |
| Minimum feature size (source2) | 600 nm[4] | — |
| Uniformity | < 120 nm[1] | — |
| Front-side alignment accuracy | < 500 nm[1] | — |
| Back-side alignment accuracy (MLA150-2) | < 1000 nm[1] | — |
| Maximum exposure area | 150 x 150 mm[1] | — |
| 405 nm laser power | 8000 mW[1] | — |
| 375 nm laser power (MLA150-1) | 2800 mW[1] | — |
| 375 nm laser power (MLA150-2) | 7200 mW[1] | — |
| Writing time with 405 nm laser (100 mm wafer, Fast mode) | < 9 min[1] | — |
| Writing time with 375 nm laser (100 mm wafer, Fast mode, MLA150-1) | < 32 min[1] | — |
| Writing time with 375 nm laser (100 mm wafer, Fast mode, MLA150-2) | < 9 min[1] | — |
| Exposure time for 100x100 mm² (max write speed) | 9 min[4] | — |
| Exposure time for 150x150 mm² (max write speed) | 16 min[4] | — |
| Substrate size (source2) | Up to 8" x 8"[4] | — |
| Laser wavelengths | 405 nm and 375 nm[4] | — |
| Exposure method | Non-contact[4] | — |
| Data input formats | Multiple standards (e.g., GDS, CIF, DXF)[1] | — |
| Autofocus | Real time, pneumatic[1] | — |
| Environment control | Temperature stabilization, charcoal filters[1] | — |
| Laser power (405 nm) | 8000 mW[1] | — |
| Laser power (375 nm) - MLA150-1 | 2800 mW[1] | — |
| Laser power (375 nm) - MLA150-2 | 7200 mW[1] | — |
| Write time (100 mm wafer, 405 nm fast mode) | < 9 min[1] | — |
| Write time (100 mm wafer, 375 nm fast mode) - MLA150-1 | < 32 min[1] | — |
| Write time (100 mm wafer, 375 nm fast mode) - MLA150-2 | < 9 min[1] | — |
| Write time (150 x 150 mm) | 16 minutes[4] | — |
| Write time (100 mm wafer typical) | about 30min[6] | — |
| Write time (50 mm x 50 mm) | approx. 4 mins[5] | — |
| Linewidth variation (stitching) | ≤100nm[6] | — |
| Write grid (address unit) - High Quality | 40 nm[6] | — |
| Write grid (address unit) - Fast Mode | 100 nm[6] | — |
| Grayscale capability | 8-bit grayscale bitmap or layer-structured DXF[6] | — |
| High aspect ratio mode | Available (reduced NA for thick resists >100µm)[1] | — |
| Substrate thickness maximum | 8 mm (MLA150-1); 12 mm (MLA150-2)[1] | — |
| Model | MLA150[1] | — |
| Type | Mask-less aligner[1] | — |
| Exposure source | 405 nm or 375 nm laser diodes[1] | — |
| Alignment | Top-side and back-side alignment[1] | — |
| Substrate size | Up to 8" x 8"[4] | — |
| Tool type | Mask-less aligner[1] | — |
| Backside alignment accuracy | < 1000 nm[1] | — |
| Direct-write exposure | Exposes the design directly onto a wafer without a photomask[4] | — |
| Substrate range | — | 5 x 5 mm dies to wafers up to 150 mm[7] |
| Maximum substrate thickness | — | 6 mm[7] |
| Resolution | — | 0.6 µm under optimum conditions in vacuum mode[7] |
| Wavelength channels | — | Channel 1 (405 nm) and Channel 2 (365 nm)[7] |
| Wafer chucks available | — | 3, 4, 6 inch[7] |
| Mask holders available | — | 4, 5, 7 inch[7] |
| Top side alignment precision | — | 0.5 µm[7] |
| Objectives | — | 5X, 10X, and 20X[7] |
| Alignment features | — | Splitfield microscope with storage and automatic movement between reference points; Bottom-Side Alignment (BSA); Wedge Error Compensation (WEC)[7] |
| Exposure modes | — | proximity, soft contact, hard contact, and vacuum[7] |
| Microscope objectives | — | 5X, 10X, and 20X[7] |
| Wedge Error Compensation | — | Yes (ensures parallelism between substrate and photomask)[7] |
| Resolution (vacuum mode) | — | 0.6 µm (optimum conditions)[7] |
| Bottom-Side Alignment | — | Available (BSA)[7] |
| Resolution (optimum vacuum mode) | — | 0.6 µm[7] |
| Resolution (typical) | — | 1 µm and better[8] |
| Exposure methods | — | flood, proximity, soft contact, hard contact, low vacuum, vacuum[8] |
| Mask sizes | — | 2.5x2.5, 4x4, 5x5, 8x8 inches[8] |
| Wafer size (top-side alignment) | — | up to 6 inches (2, 3, 4, 6 inch)[8] |
| Wafer size (bottom-side alignment) | — | 3 and 4 inch[8] |
| Wavelength range | — | UV broadband 250-450 nm; i-line 365 nm; g-line 436 nm[8] |
| Light source (UIC) | — | Broadband Hg lamp with Channel 1 (405 nm) and Channel 2 (365 nm)[7] |
| Alignment accuracy (motorized top-side) | — | 0.5 µm[7] |
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