Comparison ledger
Hitachi M 712 M 711 Dry Etch Process, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | M 712 M 711 Dry Etch ProcessHitachi | 100 ICP FluorineOxford Instruments |
|---|---|---|
| OEM | Hitachi | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Hitachi M 712 M 711 Dry Etch Process | Oxford Instruments 100 ICP Fluorine |
| Cited variants |
| — |
| Specifications | ||
| Software revision | 1.07 PMv.02.16M[2] | — |
| Configuration | Gaspanel included[2] | — |
| ESC Type | Bipolar[1] | — |
| Endpoint type | Hitachi EPD monitor ePMv02.16M[1] | — |
| Wafer size | 12 inch[2] | 4 inch, 6 inch, 8 inch (with clamp change)[3] |
| TMP | SHIMAZU EC TMP[1] | — |
| TMP controller | 3203LMC-K1 EC TMP Controller[1] | — |
| Source generator | DAIHEN ES7-IIA EC Source generator[1] | — |
| Bias generator | PEARL CF-500-400K EC Bias generator[1] | — |
| Gas configuration | Line / EC1 / Strip - 1 / Ar - 2 / C12 - 3 / SF6 - 4 / HBr - 5 / CF3 - 6 / CH4 - 7 / NF3 - 8 / O2 - 9 / N2 - 10/ SF6 - 11/ C12 - 12/ O2[1] | — |
| Gas panel included | Yes[2] | — |
| Vintage | 2006[2] | — |
| Etch Gases | — | SF6, CF4, O2, Ar, N2, CHF3, C4F8[3] |
| Cryo DRIE etch rate | — | up to 5 µm/min[3] |
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