Waferpedia

Comparison ledger

2300versusRainbow 4520

Lam Research 2300, Lam Research Rainbow 4520, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
2300Lam Research
Rainbow 4520Lam Research
OEMLam ResearchLam Research
CategoryEtchEtch
Wafer size8"8"
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyLam Research 2300Lam Research Rainbow 4520
Cited variants
  • Lam 2300 Etch Chamber[1]
  • Lam 2300[2]
  • Lam 2300, 12" KIYO EXP MRT[2]
  • Lam 2300, 12"[3]
  • 2300 Etch Chamber[1]
  • 2300 KIYO EXP MRT[2]
  • 2300[3]
  • Lam Rainbow 45XX Series[4]
Specifications
3 ChambersInsulating Film, Metal, Ashing[1]—
Wafer sizeWafer set up for 8"[1]Up to 8 inch capability; customized[4]
ConfigurationWith Exelan Flex 45 Dielectric Etch Chamber[1]—
Wafer sizes supported8 inch, 12 inch[1]—
Chamber configuration3 chambers: Insulating Film, Metal, Ashing[1]—
Wafer setupWafer set up for 8 inch[1]—
Dielectric etch chamberExelan Flex 45 Dielectric Etch Chamber[1]—
Included subsystemsHDD & Software included; all pumps, generators & other subsystems included[1]—
CE MarkCE Mark 2023 Vintage[1]—
Configuration (12-inch)KIYO EXP MRT[2]—
OEMLam Research[1]Lam Research[4]
Model2300[1]Lam Rainbow 4520[4]
CategoryEtch[1]—
Wafer sizes8 inch, 12 inch[1]—
Condition—Refurbished and Upgraded[4]
Chuck type—Clamp; customized[4]
Controller—Allwin21 PC with touch screen monitor[4]
Operation modes—Maintenance, Manual, Semi Automatic and Full Automatic[4]
Wafer handling—Fully automated, in-line, single-wafer plasma/RIE etching system[4]
Gases—1-6 or 1-8 lines with MFC; maximum 9 lines[4]
Endpoint—Dual endpoint 405nm/520nm; EOP optional[4]
Type—Plasma/RIE etching system[4]
Automation—Fully automated, in-line, single-wafer[4]
Wafer Sizes—6-inch or 8-inch[4]
Electrode—Top or/and bottom powered electrode plate[4]
Electrode Spacing—Programmable[4]
Wafer Alignment—Automatic noncontact wafer alignment and placement[4]
RF Match—Unique RF match networks located at upper and lower electrodes for programmable switching between plasma and RIE modes[4]
Main Use—Oxide Etch (Lam Rainbow 45XX Series)[4]
Control—Computer-controlled, manual or automatic control[4]
Chamber Type—Main chamber, moving gap standard process kit[4]
Chuck Type—Clamp chuck; ESC chuck optional[4]
Number of Gases—1-6 or 1-8 lines MFC, maximum 9 lines[4]
Typical Gases—Ar, CF4, CHF3, He, SF6, N2, NF3 (process dependent)[4]
Endpoint Detection—Dual endpoint 405nm/520nm EOP is optional[4]
Chiller—TCU LAM2080 Chiller module or equivalent is optional[4]
Base Pressure—≤ 5 mT[4]
Chamber Leak Rate—≤ 5 mT/min[4]
ELL & XLL Leak Rate—≤ 10 mT/min[4]
Gap Set Point—1 cm, tolerance ≤ 0.02 cm[4]
Chiller Precision—± 1 ℃[4]
MFC/RF/DC Precision—≤5% of set points[4]
Particle (Bare-Si, RF-Off)—< 50 @0.3um[4]
Power—208V, 50/60Hz, 3 phase, 5 wires, WYE, 30A(Max), 23(Norm) for Etcher[4]
Physical Dimensions (Etcher)—44"W x 54"D x 66"H, 1700 lbs[4]
Physical Dimensions (RF Cart)—22"W x 32"D x 44"H, 250 lbs[4]
Physical Dimensions (TCU)—23"W x 37"D x 55"H, 420 lbs[4]
Exhaust—Etcher Cabinet: Draw CFM 300, H2O 0.5, House, 4 inch Duct; Etcher Gas Panel: Draw CFM 75, H2O 0.5, Scrubbed, possible hazard, 2 inch Duct[4]
Cooling Water—R.F. Cart: 2±0.2 GPM, 85±5 PSI, 14~35°C, 3/8" ID fittings, <200 u; TCU: 6±0.5 GPM, 11~26°C, 1/2" ID fittings, <200 u[4]
Nitrogen—40±10 PSI and 90±10 PSI, CDA can also be used for R.F. Cart[4]
Thermal Output—Etcher: 3.4K carried by water, 3.4k by exhaust, 7k dispersed; RF Cart: 7K carried by water, 7k dispersed; TCU: 4K carried by water, 1k dispersed[4]
Process Gases—1/4" VCR fittings, <0.05u filter[4]

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Sources (4)Every fact above is drawn from these public sources
  1. [1]Equipment inventory listing
  2. [2]Equipment inventory listing
  3. [3]Equipment inventory listing
  4. [4]allwin21.comallwin21.com