Comparison ledger
Nikon 1505 G 6 E, Ultratech LSA 100 A Wafer, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 1505 G 6 ENikon | LSA 100 A WaferUltratech |
|---|---|---|
| OEM | Nikon | Ultratech |
| Category | Lithography | Lithography |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | 1988– | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Nikon 1505 | Ultratech LSA 100 A Wafer |
| Specifications | ||
| Configuration | 5" reticle[1] | Laser Spike Anneal (LSA)[4] |
| Resolution | 650 nm[2] | — |
| Numerical Aperture | 0.54[2] | — |
| Reduction | 5x[2] | — |
| Exposure Field | 15 x 15 mm[2] | — |
| Alignment Accuracy | 130 nm[2] | — |
| Wafer Size | 4 inch[1] | — |
| Light Source | g-line[3] | — |
| Introduction Year | 1988[2] | — |
| NA (Numerical Aperture) | 0.54[2] | — |
| Make | Nikon[1] | — |
| Model | 1505 G 6 E[1] | — |
| Category | Stepper[1] | — |
| Wafer Sizes | 4 inch[1] | — |
| Exposure type | g-line[2] | — |
| NA | 0.54[2] | — |
| Exposure field | 9.3 x 18.8 mm[2] | — |
| Voltage | — | 115 VAC / 1 Phase / 50/60 Hz[5] |
| Tool type | — | Wafer Stepper[4] |
| Optics | — | Laser Spike Anneal (LSA)[5] |
| Power | — | 115 VAC / 1 Phase / 50/60 Hz[5] |
| Current | — | 15 Amps FLA / 6 Amps Largest Load[5] |
| Included module | — | Laser[5] |
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