Comparison ledger
OAI 808-Aligner-Tool-Procedu, SUSS MicroTec ACS200, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | ACS200SUSS MicroTec | |
|---|---|---|
| OEM | OAI | SUSS MicroTec |
| Category | Lithography | Lithography |
| Wafer size | 100mm | 100mm |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | i-line |
| Family | OAI 808-Aligner-Tool-Procedu | SUSS MicroTec ACS200 |
| Specifications | ||
| Model | OAI Model 800 Mask Aligner[1] | — |
| Automation | Semi-automated[1] | — |
| Camera count | Four-camera[1] | — |
| Alignment type | Optical front- and backside mask aligner[1] | — |
| Alignment accuracy | 1 µm to 2 µm[1] | — |
| Backside focus | Motorized[1] | — |
| Auto leveling | Motorized[1] | — |
| Gap setting | Auto gap setting[1] | — |
| Supported piece size | 2", 100mm, 150mm, 200mm, pieces[1] | — |
| Thickness range | 0.1–10 mm[1] | — |
| Mask size | 4"x4"; 5"x5"; 7"x7"; 9"x9"[1] | — |
| Top side alignment | ± 1.0 µm 3σ[1] | — |
| Bottom side alignment | ± 1.25 µm 3σ[1] | — |
| Large gap alignment | Option / ± 1.5 µm 3σ[1] | — |
| Resolution | Vacuum + Hard Contact ≤ 1 µm; Hard Contact ≤ 1.5 µm; Soft Contact ≤ 2.0 µm; Proximity ≥ 3.0 µm[1] | — |
| Exposure wavelength | 350–450 nm[1] | — |
| Lamp | Mercury arc lamp, 350 W[1] | — |
| Type | semi-automated, four-camera, optical front- and backside mask aligner[1] | — |
| Motorized backside focus | yes[1] | — |
| Motorized auto leveling | yes[1] | — |
| Auto gap setting | yes[1] | — |
| Size | 2 in, 100 mm, 150 mm, 200 mm[1] | — |
| Thickness | 0.1-10 mm[1] | — |
| Mercury arc lamp | 350 W[1] | — |
| Tool type | — | Modular cluster tool[2] |
| Process | — | Coating and development of i-line photoresists[2] |
| Loading/unloading ports | — | Two loading/unloading ports: one cassette for coating and one cassette for development[2] |
| Wafer centering | — | Wafer centering station[2] |
| Spin-coating modules | — | Two spin-coating modules[2] |
| Development module | — | One development module with puddle and spray options[2] |
| Hotplates and coolplates | — | Two stacks of hotplates (9 in total) and coolplates (3 in total)[2] |
| HMDS priming | — | Additional HMDS-priming module[2] |
| Wafer handling | — | Standard SEMI-wafers of 100 mm and 150 mm diameter[2] |
| Supported wafer materials | — | Opaque wafers (silicon, SOI) and transparent wafers (glass, fused-silica, sapphire)[2] |
| Photoresists available | — | AZ ECI 3007, AZ ECI 3027, AZ 10XT-20, AZ 10XT-60, AZ 15nXT, AZ 40XT[2] |
| Wafer diameter supported | — | 100mm and 150mm (on request)[2] |
| Wafer types | — | Opaque (silicon, SOI) and transparent (glass, fused-silica, sapphire)[2] |
| Number of spin-coating modules | — | 2[2] |
| Number of development modules | — | 1[2] |
| Number of hotplates | — | 9 (total across two stacks)[2] |
| Number of coolplates | — | 3[2] |
| HMDS priming module | — | Yes (included)[2] |
| Robot model | — | Sankyo SC5000[2] |
| Photoresist type | — | i-line[2] |
| Voltage | — | 400 V[3] |
| Phase | — | 3 Phase[3] |
| Frequency | — | 60 Hz[3] |
| Thermal modules | — | Two stacks of hotplates (9 in total) and coolplates (3 in total), including an additional HMDS-priming module[2] |
| Wafer material | — | Opaque wafers (silicon, SOI) and transparent wafers (glass, fused-silica, sapphire)[2] |
| Central robot | — | Individual processing modules are fed by a central robot[2] |
| Robot | — | central robot feeding the individual processing modules[2] |
| Supported wafer diameters | — | 100 mm and 150 mm diameter[2] |
Plan your fab
Building a Lithography process? Get a complete equipment list.
Open the fab equipment planner →