Waferpedia

Comparison ledger

100 ICP FluorineversusIon Beam 300

Oxford Instruments 100 ICP Fluorine, Oxford Instruments Ion Beam 300, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
100 ICP FluorineOxford Instruments
Ion Beam 300Oxford Instruments
OEMOxford InstrumentsOxford Instruments
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyOxford Instruments 100 ICP FluorineOxford Instruments Ion Beam
Specifications
Etch GasesSF6, CF4, O2, Ar, N2, CHF3, C4F8[1]—
Cryo DRIE etch rateup to 5 µm/min[1]—
Wafer size4 inch, 6 inch, 8 inch (with clamp change)[1]4 inch[2]
Configuration—has some PLC errors[2]
Category—Etch[3]
Vintage—2007[2]

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Sources (3)Every fact above is drawn from these public sources
  1. [1]nanofab.utah.edunanofab.utah.edu
  2. [2]inventory listing
  3. [3]waferpedia.comwaferpedia.com