Comparison ledger
Oxford Instruments 100 ICP Fluorine, Oxford Instruments Plasmalab80, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 100 ICP FluorineOxford Instruments | Plasmalab80Oxford Instruments |
|---|---|---|
| OEM | Oxford Instruments | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | — | up to 8-inch diameter wafers |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments 100 ICP Fluorine | Oxford Instruments Plasmalab80 |
| Specifications | ||
| Etch Gases | SF6, CF4, O2, Ar, N2, CHF3, C4F8[1] | — |
| Cryo DRIE etch rate | up to 5 µm/min[1] | — |
| Wafer size | 4 inch, 6 inch, 8 inch (with clamp change)[1] | — |
| Etch and deposition capabilities | — | Combined etch and deposition tool[2] |
| Etch processes | — | Bosch (gas chopping) or cryo processes[2] |
| Deposition materials | — | Silicon dioxide, silicon nitride, or mixed oxynitrides[2] |
| Wafer diameter | — | Up to 8-inch wafers[2] |
| Active etch/deposition region | — | Center 4 inches of the chamber[2] |
| Available gases | — | N2, N2O, O2, SF6, Ar (max flow 100 sccm); C4F8, SiH4, CH4 (max flow 20 sccm)[2] |
| Power | — | 300 W RF and 300 W ICP[2] |
| Process pressure | — | 4 to 100 mTorr[2] |
| Substrate temperature | — | -150 to 200 C[2] |
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