Comparison ledger
Oxford Instruments PlasmaPro 100 Cobra, Tegal 6540, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | PlasmaPro 100 CobraOxford Instruments | 6540Tegal |
|---|---|---|
| OEM | Oxford Instruments | Tegal |
| Category | Etch | Etch |
| Wafer size | 100mm | 100mm |
| Process node | — | down to 90nm |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments PlasmaPro 100 | Tegal 6540 |
| Cited variants | — |
|
| Specifications | ||
| Configuration | With HDD and Software[2] | — |
| Etch plasma type | Inductively Coupled Plasma (ICP)[3] | — |
| Process gases | O2 (100sccm), O2 (10sccm), SF6, CF4, BCl3, Ar, Cl2, HBr[3] | — |
| Mass flow controllers | 8 digital MFCs[3] | — |
| Chuck type | Electrostatic clamping and biasing chuck[3] | — |
| Chuck temperature range | 20°C to 60°C[3] | — |
| End-point detection | Laser reflectometry/interferometry and Optical Emission Spectroscopy (OES)[3] | — |
| Type | Plasma etching tool[3] | high-density plasma etch system[4] |
| Processing diameter | Full wafer 100 mm[3] | — |
| Plasma type | High density plasma of ICP (Inductively Coupled Plasma) type[3] | — |
| Chuck | Electrostatic clamping and biasing chuck controlled in temperature[3] | — |
| Supported gases | O2 (100 sccm), O2 (10 sccm), SF6, CF4, BCl3, Ar, Cl2, HBr[3] | — |
| Endpoint detection | Laser reflectometry/interferometry and optical emission spectroscopy[3] | — |
| Wafer size | 100 mm (full wafer)[3] | 100mm – 200mm[1] |
| Number of MFCs | 8 digital Mass Flow Controllers[3] | — |
| Gases available | O2 (100sccm), O2 (10sccm), SF6, CF4, BCl3, Ar, Cl2, HBr[3] | — |
| Etch materials | Al, Ti, TiN, Si, SiO2, Si3N4, polyimide, Al2O3[3] | — |
| Gases | O2 (100 sccm), O2 (10 sccm), SF6, CF4, BCl3, Ar, Cl2, HBr[3] | — |
| Compatibility | Microelectronic compatible[3] | — |
| Reactor | — | HRe reactor / HRe™ reactor[4] |
| Plasma technology | — | dual-frequency RF power technology / dual-frequency RF power application[4] |
| Plasma confinement | — | magnetic plasma confinement[4] |
| Optimized design rule | — | down to 0.13 micron[4] |
| RF power | — | dual-frequency RF power application[1] |
| Design rule | — | optimized for device design rules down to 90nm[1] |
Plan your fab
Building a Etch process? Get a complete equipment list.
Open the fab equipment planner →