Waferpedia

Comparison ledger

EBPG5150versus150 e Mask

Raith EBPG5150, SUSS MicroTec 150 e Mask, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
150 e MaskSUSS MicroTec
OEMRaithSUSS MicroTec
CategoryLithographyLithography
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyRaith EBPG5150SUSS MicroTec 150 e Mask
Cited variants
  • EBPG5150 Plus[1]
  • EBPG5200 Plus[1]
—
Specifications
product familyElectron Beam Lithography[2]—
system lineEBPG[1]—
descriptionHighest throughput, automation, and precision[1]—
column technologyRobust 100 kV column technology[1]—
lithography resolutionbelow 5 nm[1]—
exposure capabilityAutomated wafer and multi-sample exposures[1]—
beam currentup to 350 nA[1]—
overlay accuracy≤ 5 nm[1]—
stitching accuracy≤ 8 nm[1]—
stage sizesame 6-inch laser stage (155 mm travel range)[1]—
laser interferometer resolution10 λ/1024 (0.6 nm) standard[1]—
thermo-calibration systemstandard[1]—
positional drift< 25 nm / h[1]—
control softwareDigital RAITH Beams[1]—
Product lineEBPG[2]—
TechnologyElectron beam lithography[2]—
Stage6-inch laser stage[1]—
Stage travel range155 mm[1]—

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Sources (2)Every fact above is drawn from these public sources
  1. [1]web.archive.orgweb.archive.org
  2. [2]web.archive.orgweb.archive.org