Comparison ledger
Tegal 1511e, Tegal 901e, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 1511eTegal | 901eTegal |
|---|---|---|
| OEM | Tegal | Tegal |
| Category | Etch | Etch |
| Wafer size | three- to six-inch wafers | 75 mm to 150 mm round substrates; rectangular substrates from 100 mm to 125 mm on a side |
| Process node | — | down to 0.5 micron |
| Introduced | 1984 | 2000 |
| Production run | 1984– | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | 900 Series |
| Family | Tegal 1511e | Tegal 901e |
| Specifications | ||
| tool type | tri-electrode dual-frequency plasma etch system[1] | — |
| wafer size | three- to six-inch wafers[1] | — |
| first sold | 1984[1] | — |
| system characteristic | first vacuum-loadlocked dual-frequency tri-electrode etch system[1] | — |
| First vacuum-loadlocked dual-frequency tri-electrode etch system | Yes[1] | — |
| Type | — | diode plasma etcher[2] |
| Fixed electrode gap | — | 38 mm[2] |
| Round substrate handling | — | 75 mm to 150 mm round silicon and GaAs substrates[2] |
| Rectangular substrate handling | — | rectangular substrates from 100 mm to 125 mm on a side[2] |
| Design-rule suitability | — | best suited for technology design rules down to 0.5 micron[2] |
| Electrode gap | — | 38 mm fixed[2] |
| Round substrate size | — | 75 mm to 150 mm[2] |
| Rectangular substrate size | — | 100 mm to 125 mm on a side[2] |
| Best suited design rules | — | Down to 0.5 micron[2] |
| Wafer size | — | Wafer Size Range[3] |
| Phase | — | Power Requirements 230 V 16.0 A 50/60 Hz 1 Phase[3] |
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