Comparison ledger
Tegal 6540, Tegal 903, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 6540Tegal | 903Tegal |
|---|---|---|
| OEM | Tegal | Tegal |
| Category | Etch | Etch |
| Wafer size | 100mm | 100mm |
| Process node | down to 90nm | — |
| Introduced | — | 2000 |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Tegal 6540 | Tegal 903 |
| Cited variants |
| |
| Specifications | ||
| Type | high-density plasma etch system[4] | — |
| Reactor | HRe reactor / HRe™ reactor[4] | — |
| Plasma technology | dual-frequency RF power technology / dual-frequency RF power application[4] | — |
| Plasma confinement | magnetic plasma confinement[4] | — |
| Wafer size | 100mm – 200mm[1] | 3", 100mm – 150mm[2] |
| Optimized design rule | down to 0.13 micron[4] | — |
| RF power | dual-frequency RF power application[1] | — |
| Design rule | optimized for device design rules down to 90nm[1] | — |
| Tool type | — | diode plasma etch tool[6] |
| Wafer size support | — | 75-150 mm round silicon and GaAs substrates; rectangular substrates from 100-125 mm on a side[6] |
| Reactors/materials | — | narrow gap RF diode reactor; plasma etch of silicon oxide and silicon nitride materials[2] |
| Reactor type | — | narrow gap RF diode reactor[2] |
| Materials | — | silicon oxide and silicon nitride[2] |
| Substrate range | — | 75–150 mm round silicon and GaAs substrates; rectangular substrates from 100–125 mm on a side[6] |
| Transport system | — | Production-proven transport system[6] |
| Round substrate range | — | 75-150 mm round silicon and GaAs substrates[6] |
| Rectangular substrate range | — | 100-125 mm on a side[6] |
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