Waferpedia

Comparison ledger

Mini Tytan 4600versus0332 F 9453 302 Diffusion

Tystar Mini Tytan 4600, Varian 0332 F 9453 302 Diffusion, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
OEMTystarVarian
CategoryThermal / DiffusionThermal / Diffusion
Wafer size50mm—
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyTystar Mini Tytan 4600Varian 0332 F 9453 302 Diffusion
Specifications
Furnace stack tubesFour vacuum tubes in one furnace stack[1]—
Atmospheric pressure tubesTwo[1]—
Low-pressure tubesTwo[1]—
Maximum temperature for silicon nitrideUp to 850 °C[1]—
Maximum temperature for all othersUp to 650 °C[1]—
Maximum deposition thickness5 µm[1]—
Low temperature oxidationFor processes of < 450 °C[1]—
Mass flow systemMFS-460[1]—
Data collection systemDCS-30[1]—
Wafer Sizeup to 150 mm (6 inch)[1]—
Maximum Temperature (Silicon Nitride)850 °C[1]—
Maximum Temperature (Other Processes)650 °C[1]—
Low Temperature Oxidation Temperature< 450 °C[1]—
Number of Tubes4 (2 atmospheric, 2 low-pressure)[1]—
LPCVD Processing StatusCurrently not available[1]—
Asset Number—142841[2]
Last Confirm Date—October 14, 2025[3]

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Sources (3)Every fact above is drawn from these public sources
  1. [1]pnf.uchicago.edupnf.uchicago.edu
  2. [2]Equipment inventory listing
  3. [3]fab-spares.comfab-spares.com