Comparison ledger
Applied Materials 0010-03485 Magnet Assy, STS 320 PC, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-03485 Magnet AssyApplied Materials | 320 PCSTS |
|---|---|---|
| OEM | Applied Materials | STS |
| Category | — | — |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-03485 Magnet Assy | STS 320 PC |
| Specifications | ||
| Configuration | WP AL 300mm PVD[1] | — |
| OEM | Applied Materials[1] | — |
| Model | 0010-03485[1] | — |
| Description | MAGNET ASSY, WP AL 300MM PVD[2] | — |
| Process | PVD[3] | — |
| Wafer size | 300mm[4] | — |
| Version | Spares[4] | — |
| Part Number | 0010-03485[1] | — |
| Manufacturer | Applied Materials[1] | — |
| Process Type | PVD (Physical Vapor Deposition)[1] | — |
| Application (Material) | Aluminum (AL)[1] | — |
| Wafer Diameter (associated) | 300 mm[1] | — |
| Type | — | Fully automatic computer controlled reactive ion etching system[5] |
| End point detection | — | Included[5] |
| Cathode diameter | — | 30 cm[5] |
| Cathode area | — | 706.5 cm2[5] |
| RF forward power range | — | 10 to 600 watts[5] |
| Chamber max pressure | — | 500 mTorr[5] |
| Substrate sizes | — | 2 to 8 inch and small fragments[5] |
| Process gases | — | SF6, CHF3, C3F8, He, CF4, O2, and N2[5] |