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0010-13622 RF Match forversus80 Plus

Applied Materials 0010-13622 RF Match for, Oxford Instruments 80 Plus, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
0010-13622 RF Match forApplied Materials
80 PlusOxford Instruments
OEMApplied MaterialsOxford Instruments
CategoryDepositionDeposition
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials 0010-13622 RF Match forOxford Instruments 80 Plus
Specifications
ConfigurationHigh Efficiency HE RF Match-Bias[1]50/60 Hz[2]
Model0010-13622[1]—
Product TypeRF Match for PVD (Physical Vapor Deposition)[1]—
FeatureHigh Efficiency HE RF Match-Bias[1]—
Phase—3 Phase[2]
Voltage—415 vAC[2]
Process type—Plasma-enhanced chemical vapor deposition (PECVD)[3]
Maximum wafer size—8 inches (200 mm)[3]
Maximum temperature—400 °C[3]
RF generator power—300W at 13.56 MHz[3]
Available gases—SiH4, NH3, N2O, N2, O2, CF4[3]
Total gas flow range—150 – 3000 sccm[3]
Pressure range—200 – 2000 mTorr[3]

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Sources (3)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]inventory listing
  3. [3]aggiefab.tamu.eduaggiefab.tamu.edu