Comparison ledger
Applied Materials 0010 47763, Tegal 901G, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010 47763Applied Materials | 901GTegal |
|---|---|---|
| OEM | Applied Materials | Tegal |
| Category | Etch | Etch |
| Wafer size | — | 75 mm to 150 mm round substrates; square and rectangular substrates |
| Process node | — | — |
| Introduced | — | 1999 |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010 47763 | Tegal 901G |
| Specifications | ||
| Configuration | 2nd Source New[1] | special configuration for GaAs processing[4] |
| Type | Monopolar Dual Heated[2] | — |
| Description | ASSY, ESC, BONDED, MONOPOLAR DUAL HEATED[3] | — |
| Possible Materials | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[2] | — |
| Model | 0010-47763[1] | — |
| OEM | Applied Materials[1] | — |
| Material (possible) | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[2] | — |
| Application | Fixing wafers in etching process (PVD, CVD, ETCH)[2] | — |
| Quantity available (source) | 1[2] | — |
| Tool type | — | diode plasma etcher[4] |
| Configured features | — | special sensors and electrode designs[5] |
| Intended applications on platform | — | pad, zero layer, non-selective nitride, backside, planarization, oxide, nitride, poly, and III-V materials applications such as GaAs[5] |
| Substrate sizes on platform | — | 75 mm to 150 mm round substrates as well as square and rectangular substrates[5] |
| Equipment Type | — | Diode plasma etcher[4] |
| Process | — | Plasma etching[4] |
| Substrate Size | — | 75 mm to 150 mm round substrates; square and rectangular substrates[5] |
| Series | — | 900 series[4] |
| Installed Base (900 Series) | — | More than 1,300 systems worldwide[4] |
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