Comparison ledger
Applied Materials 0010 47763, Ulvac NE 950, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010 47763Applied Materials | NE 950Ulvac |
|---|---|---|
| OEM | Applied Materials | Ulvac |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010 47763 | Ulvac NE 950 |
| Cited variants | — | |
| Specifications | ||
| Configuration | 2nd Source New[2] | — |
| Type | Monopolar Dual Heated[3] | — |
| Description | ASSY, ESC, BONDED, MONOPOLAR DUAL HEATED[4] | — |
| Possible Materials | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[3] | — |
| Model | 0010-47763[2] | NE 950[5] |
| OEM | Applied Materials[2] | — |
| Material (possible) | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[3] | — |
| Application | Fixing wafers in etching process (PVD, CVD, ETCH)[3] | — |
| Quantity available (source) | 1[3] | — |
| Manufacturer | — | Ulvac[5] |
| Category | — | Etch[6] |
| Tool type | — | ICP-RIE (Inductively Coupled Plasma - Reactive Ion Etch) system[6] |
| Wafer description | — | chamber described for 2" to 12" wafers[6] |
| Process type | — | ICP-RIE (Inductively Coupled Plasma - Reactive Ion Etch)[6] |
| Wafer size | — | 2" to 12" wafers[6] |
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