Comparison ledger
ASML 5500, GCA 6100 C Wafer, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 5500ASML | 6100 C WaferGCA |
|---|---|---|
| OEM | ASML | GCA |
| Category | Lithography | Lithography |
| Wafer size | 100mm | 100mm |
| Process node | 248 nm (KrF) DUV | — |
| Introduced | — | — |
| Production run | 1991– | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | ASML 5500 | GCA 6100 C Wafer |
| Cited variants | — | |
| Specifications | ||
| Manufacturer | ASML[1] | — |
| Model | PAS 5500/300[1] | 6100 C[5] |
| Description | Deep-UV Stepper Photolithography[1] | — |
| Exposure wavelength | 248 nm (KrF)[1] | — |
| Configured wafer size | 4 in wafers[1] | — |
| Maximum wafer size | 4 in (100 mm) wafers with SEMI standard wafer flat (not notch)[1] | — |
| Layer-to-layer overlay accuracy | better than 30 nm[1] | — |
| Minimum feature size | ≤150 nm isolated lines; ≤200 nm dense patterns[1] | — |
| Full-field useable exposure area | intersection of a 31 mm diameter circle and a 22 mm x 27 mm rectangle[1] | — |
| Sample size | 100 mm wafers with SEMI std. major flat[1] | — |
| Alignment accuracy | < 50 nm[1] | — |
| Wafer thickness | minimum approximately 200 µm; maximum approximately 1.1 mm[1] | — |
| Maximum dose | ~100 mJ[1] | — |
| Minimum Feature Size (dense) | ≤200 nm[1] | — |
| Minimum Feature Size (isolated lines) | ≤150 nm[1] | — |
| Overlay Accuracy | Better than 30 nm[1] | — |
| Maximum Field Size (usable exposure area) | 22 mm x 27 mm rectangle within a 31 mm diameter circle[1] | — |
| Wafer Size (standard) | 4 inch (100 mm)[1] | — |
| Throughput | Typically minutes per wafer (multiple 4-inch wafers)[1] | — |
| Reduction Ratio | 5x (for some variants, e.g., /200 and /60)[2] | — |
| Numerical Aperture (variable) | 0.48-0.60 (for /200 variant)[2] | — |
| Alignment Accuracy | < 50 nm (for /300 variant)[1] | — |
| Resolution (PAS 5500/300) | ≤150 nm isolated lines, ≤200 nm dense patterns[1] | — |
| Exposure wavelength (PAS 5500/60) | 365 nm[3] | — |
| Reduction ratio (PAS 5500/60) | 5:1[3] | — |
| Wafer size (PAS 5500/300) | 100 mm (4 inch) wafers with SEMI standard flat[1] | — |
| Overlay accuracy (PAS 5500/300) | better than 30 nm[1] | — |
| Resolution (PAS 5500/200) | 350 nm[2] | — |
| Numerical aperture (PAS 5500/200) | 0.48-0.60 variable[2] | — |
| Maximum field size (PAS 5500/200) | 22x22 mm[2] | — |
| Minimum feature size (PAS 5500/60) | 450 nm[3] | — |
| Configuration | — | Maximus 1000 Light Source (350w)[5] |
| Wafer size | — | 100 mm AWH1 (Automatic Wafer Handler)[5] |
| Lens | — | 10X g-line (436), NA=0.28[5] |
| Equipment Rack | — | (Top Down)[5] |
| Make | — | GCA[5] |
| Category | — | Lithography[6] |
| Wafer handling | — | AWH1 (Automatic Wafer Handler)[5] |
| Stage travel | — | 150 mm X/Y stage travel[5] |
| Optics | — | 10X g-line (436), NA=0.28[5] |
| Light source | — | Maximus 1000 Light Source (350w)[5] |
| Controller | — | RZE PC Upgrade Controller (v605.1 Operating System)[5] |
| Alignment monitor | — | Alignment Monitor & PC Monitor[6] |
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