Waferpedia

Comparison ledger

NXE 3400 B EUVversus101

ASML NXE 3400 B EUV, EV Group 101, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
101EV Group
OEMASMLEV Group
CategoryLithographyLithography
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyASML NXE 3400 B EUVEV Group 101
Specifications
Wafer size300 mm (12 inch)[1]—
Node support7 nm, 5 nm[2]—
Numerical aperture (NA)0.33[2]—
Throughput (wafers per hour)≥ 125 (at 20 mJ/cm², die size 26×33 mm, 96 shots)[2]—
Exposure field size26 × 33 mm[2]—
Dedicated chuck overlay1.4 nm[2]—
Matched-machine overlay2 nm[2]—
Sigma range0.06 – 1.0[2]—
Reduction factor4x[2]—
Level sensor typeUV light based (same as NXE:3350B)[2]—
OEM—EV Group[3]
Model—101[3]
Equipment name—EVG 101 Spray Coater[3]
NEMO ID—evgspraycoat[3]
Training required—EVG 101 Training[3]
Training duration—1.50 hours[3]
Processing technique—Resist Spray Coat (manual)[3]
Cleanliness—"All"[3]
Location—SNF Paul G Allen L107 Cleanroom[3]
Wafer diameter (substrate size)—up to 300 mm[4]
Available modules—Spin coat / OmniSpray® / develop[4]
Wafer handling options—Bowed / warped / thin wafer handling, edge handling[4]
Dispense options—Various resist dispense pumps covering viscosities up to 52000 cP; constant pressure dispense systems; EBR / BSR / pre-wet / bowl wash / liquid priming[4]
Processing technique (at SNF)—Resist Spray Coat (manual)[5]
Cleanliness group (at SNF)—"All"[3]

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Sources (5)Every fact above is drawn from these public sources
  1. [1]Equipment inventory listing
  2. [2]asml.comasml.com
  3. [3]snfguide.stanford.edusnfguide.stanford.edu
  4. [4]evgroup.comevgroup.com
  5. [5]snfguide.stanford.edusnfguide.stanford.edu