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Comparison ledger

GSD 200 E 2versus160 XP Ion

Axcelis GSD 200 E 2, Varian 160 XP Ion, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
OEMAxcelisVarian
CategoryIon ImplantationIon Implantation
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyAxcelis GSD 200 E 2Varian 160 XP Ion
Specifications
Voltage208 V[1]—
Frequency50 Hz[1]—
Phase3 Phase[1]—
TypeHigh Current ion implanter[2]—
Energy180 KeV[2]—
Wafer Size8 inch (200 mm)[2]—
Power Requirements208 V, 125 A, 50 Hz, 3 Phase[1]—
Vintage (listed unit 158479)2000[3]—
Vintage (listed unit 158478)2004[1]—
Maximum Energy180 keV[2]—
Current125 A[1]—
Energy Rating180KeV[2]—
Amperage125 A[1]—
Configuration—150mm High Current IMP[4]
OEM—Varian[5]
Model—160 XP Ion[5]
Category—Ion Implantation[4]
Tool type—ion implanter[4]

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Sources (5)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]asseta.comasseta.com
  3. [3]Equipment inventory listing
  4. [4]waferpedia.comwaferpedia.com
  5. [5]Equipment inventory listing