Comparison ledger
Canon FPA 3000 iW, Nikon 1505 G 6 E, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | FPA 3000 iWCanon | 1505 G 6 ENikon |
|---|---|---|
| OEM | Canon | Nikon |
| Category | Lithography | Lithography |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | 1988– |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Canon FPA 3000 | Nikon 1505 |
| Cited variants |
| — |
| Specifications | ||
| Voltage | 200V[2] | — |
| Configuration | 50/60 Hz[3] | 5" reticle[5] |
| Phase | 3 Phase[2] | — |
| Power | 29kVA[3] | — |
| Make | Canon[3] | Nikon[5] |
| Model | FPA 3000 iW[3] | 1505 G 6 E[5] |
| Category | Lithography[2] | Stepper[5] |
| Equipment type | Stepter[3] | — |
| Frequency | 50/60 Hz[2] | — |
| Chamber | Rasco TBW-CD-83iW Compact Chamber[3] | — |
| Reticle size | 6" square t=0.25"[4] | — |
| Reticle material | Quartz[4] | — |
| Pattern material | 2 layer Cr, 3 layer Cr[4] | — |
| Pellicle frame | Pattern side only[4] | — |
| Wafer size | 4" thru 8" SEMI Standard, JEIDA, Notch / Flat[4] | — |
| Projection magnification | 1/2 X[4] | — |
| Numerical aperture | 0.24[4] | — |
| Field size | 50X50mm[4] | — |
| Exposure light | i-line (365nm)[4] | — |
| Light source | 2.0KW Super High Pressure Hg Lamp[4] | — |
| Intensity | 2500 W/m 2[4] | — |
| Uniformity | < 1.5%[4] | — |
| Resolution | <0.8µm[4] | 650 nm[6] |
| Depth of focus | >4.0µm (0.8µm L&S)[4] | — |
| Image field deviation | <2.5µm[4] | — |
| Distortion | <±0.11µm[4] | — |
| Reticle rotation accuracy | <±0.02µm on wafer[4] | — |
| Reticle rotation repeatability | <0.05µm on wafer[4] | — |
| Wafer alignment | <0.10µm mean + 3sigma[4] | — |
| Focus repeatability | <0.10µm (3sigma)[4] | — |
| Leveling repeatability | <7ppm (3sigma)[4] | — |
| Minimum compensation range | >100ppm[4] | — |
| Step accuracy | <0.05µm (3sigma)[4] | — |
| Scaling | <±1.0ppm[4] | — |
| Orthogonality | <±1.0ppm[4] | — |
| Throughput | >120 wafers/hour Φ6", 50mm, 9 shots; >115 wafers/hour Φ8", 50mm, 14 shots[4] | — |
| Rasco chamber | TBW-CD-83iW Compact Chamber[3] | — |
| Numerical Aperture | — | 0.54[6] |
| Reduction | — | 5x[6] |
| Exposure Field | — | 15 x 15 mm[6] |
| Alignment Accuracy | — | 130 nm[6] |
| Wafer Size | — | 4 inch[5] |
| Light Source | — | g-line[7] |
| Introduction Year | — | 1988[6] |
| NA (Numerical Aperture) | — | 0.54[6] |
| Wafer Sizes | — | 4 inch[5] |
| Exposure type | — | g-line[6] |
| NA | — | 0.54[6] |
| Exposure field | — | 9.3 x 18.8 mm[6] |
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