Waferpedia

Comparison ledger

2100 sD advanced iversusEsec 2100 hS

Esec 2100 sD advanced i, Esec Esec 2100 hS, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
OEMEsecEsec
CategoryPackaging & BondingPackaging & Bonding
Wafer size4"4"
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation3rd generation3rd generation
FamilyEsec 2100 sD advanced iEsec Esec 2100 hS
Specifications
Bonding methodEpoxy[1]Epoxy[1]
Cycle time120 ms with Liquid Cooling option[1]120 ms (with Liquid Cooling option)[1]
Bonding accuracy20 µm @ 3σ (15 µm option)[1]20 µm @ 3σ (15 µm option)[1]
Wafer size4" to 12" (on 8" or 12" wafer frames)[1]4" to 12" (on 8" or 12" wafer frames)[1]
Die size0.25 mm (with Small Die Kit) to 20 mm[1]0.25 mm (with Small Die Kit) to 20 mm[1]
Leadframe sizeLength: 90 to 300 mm; Width: 23 to 100 mm[1]—
Machine dimensions1785 x 1448 x 1400 mm (W x D x H)[1]—
Leadframe size (Length)—90 to 300 mm[1]
Leadframe size (Width)—23 to 100 mm[1]
Machine dimensions (W x D x H)—1785 x 1448 x 1400 mm[1]

Plan your fab

Building a Packaging & Bonding process? Get a complete equipment list.

Open the fab equipment planner →
Sources (1)Every fact above is drawn from these public sources
  1. [1]besi.combesi.com