Comparison ledger
EV Group 101, EV Group 6200 NT Mask, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 101EV Group | 6200 NT MaskEV Group |
|---|---|---|
| OEM | EV Group | EV Group |
| Category | Lithography | Lithography |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | EV Group 101 | EV Group 6200 NT Mask |
| Specifications | ||
| OEM | EV Group[1] | — |
| Model | 101[1] | — |
| Equipment name | EVG 101 Spray Coater[1] | — |
| NEMO ID | evgspraycoat[1] | — |
| Training required | EVG 101 Training[1] | — |
| Training duration | 1.50 hours[1] | — |
| Processing technique | Resist Spray Coat (manual)[1] | — |
| Cleanliness | "All"[1] | — |
| Location | SNF Paul G Allen L107 Cleanroom[1] | — |
| Wafer diameter (substrate size) | up to 300 mm[2] | — |
| Available modules | Spin coat / OmniSpray® / develop[2] | — |
| Wafer handling options | Bowed / warped / thin wafer handling, edge handling[2] | — |
| Dispense options | Various resist dispense pumps covering viscosities up to 52000 cP; constant pressure dispense systems; EBR / BSR / pre-wet / bowl wash / liquid priming[2] | — |
| Processing technique (at SNF) | Resist Spray Coat (manual)[3] | — |
| Cleanliness group (at SNF) | "All"[1] | — |
| Wafer/substrate size | — | up to 200 mm / 8"[4] |
| Top side alignment accuracy | — | ≤ ± 0.5 µm[5] |
| Bottom side alignment accuracy | — | ≤ ± 1.0 µm[5] |
| IR alignment accuracy | — | ≤ ± 2.0 µm[5] |
| Exposure source | — | Mercury light source / UV LED light source[4] |
| Exposure modes | — | Hard, Soft, & Vacuum Contact; Proximity[6] |
| Proximity exposure gap range | — | 0 - 300 µm adjustable via software[6] |
| Wafer thickness | — | 0.1 - 10 mm (Top Side)[6] |
| Mask size | — | up to 9"[5] |
| Substrate/wafer size (max) | — | 200 mm[5] |
| Footprint | — | 1.95 m²[5] |
| Height | — | 2.10 m[5] |
| Weight | — | ~ 980 kg[5] |
| Throughput (first print) | — | 180 wafers per hour[4] |
| Throughput (aligned) | — | 140 wafers per hour[4] |
| Wedge compensation | — | Fully automatic - SW controlled[4] |
| Resolution (SmartNIL) | — | ≤ 40 nm[7] |
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