Comparison ledger
Lam Research 4520 i Oxide, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 4520 i OxideLam Research | 100 ICP FluorineOxford Instruments |
|---|---|---|
| OEM | Lam Research | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Lam Research Rainbow 4520 | Oxford Instruments 100 ICP Fluorine |
| Specifications | ||
| Configuration | Bulkhead system mount w/tunnel covers[1] | — |
| Software Version | Classic 7,31-42[2] | — |
| Phase | Main Power 208V, 3 Phase, 5Wire, 175A, 60/[1] | — |
| Make | Lam[2] | — |
| Model | 4520 i[2] | — |
| Equipment type | Oxide Etcher[3] | — |
| Wafer size | 6 inch[2] | 4 inch, 6 inch, 8 inch (with clamp change)[5] |
| Clamp type | ESC[2] | — |
| System mount | Bulkhead system mount w/tunnel covers[2] | — |
| RF power | Rack AE PDW2200 RFG1250 13,56MHz[2] | — |
| Main power | 208V, 3 Phase, 5Wire, 175A, 60/[2] | — |
| Endpoint detector | Single lower chamber endpoint detector (405/520nm) Non-heated endpoint window[2] | — |
| Vacuum / pumping | Low pressure chamber manifold; AC--2 chamber pressure control[2] | — |
| Gas 1 | AR 375sccm[2] | — |
| Gas 2 | CF4 100 sccm[2] | — |
| Gas 3 | CHF3 50 sccm[2] | — |
| Gas 4 | He 200 sccm[2] | — |
| Gas 5 | O2 20 sccm[2] | — |
| Gas 6 | N2 200 sccm[2] | — |
| Gas 8 | He 1000sccm[2] | — |
| UPC | He (50 sccm)[2] | — |
| Wafer handling | Hine 38A open cassette Send/Receive indexers[2] | — |
| Gas 7 | NF3 500 sccm[1] | — |
| Applications | Contact etch; Planarization; Via etch; Trench mask etch; Pad etch[4] | — |
| System | Single wafer, two active processing chambers, vacuum load-locked low pressure oxide system[4] | — |
| Etch Gases | — | SF6, CF4, O2, Ar, N2, CHF3, C4F8[5] |
| Cryo DRIE etch rate | — | up to 5 µm/min[5] |
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