Waferpedia

Comparison ledger

EDC-HL-8versusWS-650-15

Laurell EDC-HL-8, Laurell WS-650-15, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
EDC-HL-8Laurell
WS-650-15Laurell
OEMLaurellLaurell
CategorySpin coaterSpin coater
Wafer size200mm300mm
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation—650-series
FamilyLaurell EDC-HL-8Laurell WS-650-15
Cited variants
  • WS-650-15 B650-series[2]
  • WS-650-15B650-series[3]
  • WS-650-15 B650-series[4]
Specifications
Series650-series EDC system[1]—
Maximum wafer sizeup to 200 mm[1]—
Maximum substrate size7 in × 7 in (178 mm × 178 mm)[1]—
Maximum speed capability12,000 RPM with vacuum hold-down[1]—
Recommended speed3,000 RPM with non-vacuum chucks[1]—
Power95 to 240 VAC, 47/63 HZ, ~300 Watts[1]95 to 240VAC, 47/63HZ, ~300 Watts[2]
Nitrogen/CDA pressure60–70 PSIG (4–5 bar)[1]—
Vacuum requirement25–28 inches Hg; 4.5 SCFM at 0 inches Hg[1]—
Maximum rotational speed—12,000 RPM (based on a ø 100mm silicon wafer)[2]
Wafer capacity—up to ø 300mm wafers[2]
Substrate capacity—9" × 9" (229mm × 229mm) substrates[2]
Model—WS-650-15[2]
Configuration—Station mounted[2]
Speed basis—Based on a 100mm silicon wafer[2]
Process controller—650-series process controller[2]
Processes supported—Coating, Etching, Developing, Rinsing-Drying and Cleaning[2]

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Sources (4)Every fact above is drawn from these public sources
  1. [1]web.archive.orgweb.archive.org
  2. [2]web.archive.orgweb.archive.org
  3. [3]web.archive.orgweb.archive.org
  4. [4]web.archive.orgweb.archive.org