Comparison ledger
Plasma-Therm 770, Tegal 6540, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 770Plasma-Therm | 6540Tegal |
|---|---|---|
| OEM | Plasma-Therm | Tegal |
| Category | Etch | Etch |
| Wafer size | 100mm | 100mm |
| Process node | — | down to 90nm |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Plasma-Therm 770 | Tegal 6540 |
| Cited variants | — |
|
| Specifications | ||
| Manufacturer | Plasmatherm (Unaxis)[2] | — |
| Model | Plasma-Therm 770 SLR series[2] | — |
| Tool type | Dry Etch[2] | — |
| System type | Fluorine-based ICP etcher with loadlock[2] | — |
| Plasma source | Inductively Coupled Plasma (ICP) coil[2] | — |
| Substrate bias | Capacitively coupled substrate RF supply[2] | — |
| ICP coil power | 1000 W at 2 MHz[2] | — |
| Substrate bias power | 500 W at 13.56 MHz[2] | — |
| Available gases | C4F8, SF6, O2, Ar, N2, CHF3, CF4[2] | — |
| Backside cooling | Helium backside cooling[2] | — |
| Chuck temperature | 10°C standard[2] | — |
| Wafer handling | Single 100 mm / 4-inch wafer handling with physical topside clamp contacting the outer 5 mm of the wafer[2] | — |
| Control system | Windows-based computer control of process and wafer handling[2] | — |
| Endpoint monitoring | In-situ laser monitor with camera and simulation software[2] | — |
| Number of MFC gas controllers | 8[3] | — |
| Gases (chlorine configuration) | N₂, O₂, CHF₃, AR, CH₄, CL₂, BCL₃, CF₄[3] | — |
| Wafer size range (with appropriate kit) | 2" to 8"[3] | — |
| Gases (previous usage, chlorine configuration) | N₂, O₂, He, CHF₃, Cl₂, BCl₃[4] | — |
| Type | — | high-density plasma etch system[5] |
| Reactor | — | HRe reactor / HRe™ reactor[5] |
| Plasma technology | — | dual-frequency RF power technology / dual-frequency RF power application[5] |
| Plasma confinement | — | magnetic plasma confinement[5] |
| Wafer size | — | 100mm – 200mm[1] |
| Optimized design rule | — | down to 0.13 micron[5] |
| RF power | — | dual-frequency RF power application[1] |
| Design rule | — | optimized for device design rules down to 90nm[1] |
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