Tool family
The Plasma-Therm Versaline is a semiconductor processing platform used for plasma-enhanced chemical vapor deposition (PECVD) and deep reactive-ion etching (DRIE), configured for 4-inch wafers.
Cited variants
| Designation | Generation | Vintage | Changes | Source |
|---|---|---|---|---|
| Versaline PECVD | — | — | Identified as Plasma-Enhanced Chemical Vapor Deposition. | Equipment inventory listing[1] |
| Versaline CVD | — | — | Listed as a CVD system with 3 Chamber Deposition, PCVD Versaline Chambers (x2), HDP-CVD Versaline Chamber, PM Modules (x3), Brooks MX 600, HDD, Versaline Software, and Manuals. | Equipment inventory listing[2] |
| Plasmatherm Versaline CVD | — | — | 3-chamber configuration with 2 PCVD Versaline chambers and 1 HDP-CVD Versaline chamber, plus 3 PM modules and Brooks MX 600 handler | Equipment inventory listing[2] |
| Plasma Therm Versaline LL ICP Deep Silicon Etcher (PT-DSE) | — | — | Configured for deep silicon etching using alternate gas technique similar to Bosch process | snfguide.stanford.edu[3] |
| Plasma Therm Versaline LL ICP Dielectric Etcher (PT-Ox) | — | — | Configured for etching silicon oxide and deep glass/quartz | snfguide.stanford.edu[3] |
| Plasma Therm Versaline LL ICP Metal Etcher (PT-MTL) | — | — | Configured for etching metals and metal-based compounds with volatile bi-products | snfguide.stanford.edu[3] |
The Plasma-Therm Versaline LACVD is an etch system for 6-inch wafers.
The Plasma-Therm Versaline VCX 600 ICP is a 6-inch inductively coupled plasma etch system.
The Plasma-Therm Versaline VLN ICP is an inductively coupled plasma etcher.
The Plasma-Therm Versaline is a semiconductor processing platform used for plasma-enhanced chemical vapor deposition (PECVD) and deep reactive-ion etching (DRIE), configured for 4-inch wafers.
The Plasma-Therm Versaline LACVD is an etch system for 6-inch wafers.
The Plasma-Therm Versaline VCX 600 ICP is a 6-inch inductively coupled plasma etch system.
The Plasma-Therm Versaline VLN ICP is an inductively coupled plasma etcher.