Advantest
F 5112 E-Beam Lithography
The Advantest F 5112 is a single-column e-beam lithography system that offers an economical solution for 0.13-micron and below design rules. The Advantest F 5112 uses a 50 kV acceleration voltage and a variable shaped beam of 4 μm x 4 μm. The Advantest F 5112 achieves a minimum feature size of 100 nm and uses a block exposure method with overlay accuracy of |mean|+3 sigma <= 40 nm.[1][2]
What it is
How it works
The F5112 uses a block exposure method, a high-speed e-beam deflection system, monitoring and feedback for the exposure sequence, and in situ cleaning of the electron optical column.[1]
Where it fits in the process flow
General reference — not yet source-verifiedE-beam lithography sits in the pattern-definition stage of semiconductor fabrication before development and pattern transfer.
Applications
The F5112 is suited for ASIC engineering samples, ASIC customer samples, ASIC wiring, and R&D applications.[1]
What do the numbers mean?
What does it need to run?
Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.
Where are the manuals?
Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.
Not publicly documented
Field notes
No research found yet — worked with this tool? Share what you know.
Frequently asked questions
What is the typical resolution capability of e-beam lithography?General reference — not yet source-verified
E-beam lithography offers very high resolution, routinely achieving feature sizes in the nanometer range, far smaller than those attainable by conventional optical lithography. The exact limit depends on beam energy, resist chemistry, and scattering effects.
What types of resists are used in e-beam lithography?General reference — not yet source-verified
Both positive and negative electron-beam resists are available. Positive resists become more soluble after electron exposure, while negative resists become less soluble. Commonly used resists include poly(methyl methacrylate) (PMMA) and chemically amplified resists optimized for high sensitivity and contrast.
Not publicly documented
The following facts about the F 5112 E-Beam Lithography are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the F 5112 E-Beam Lithography are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the F 5112 E-Beam Lithography are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the F 5112 E-Beam Lithography are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the F 5112 E-Beam Lithography are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the F 5112 E-Beam Lithography is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No research found yet — worked with this tool? Share what you know.
Sources & citations
Sources (3)Every fact above is drawn from these public sources
- [1]web.archive.org — advantest.co.jp (Feb 5, 2012)web.archive.org
- [2]inventory listing
- [3]Inventory photo
Last updated Oct 3, 2026.
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