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Aixtron

G 5 MOCVD Reactor

DepositionAixtron G 5 MOCVD Reactor family
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G 5 MOCVD Reactor — Inventory photo
Fig. 01G 5 MOCVD ReactorInventory photo[1]

What it is

The Aixtron G 5 is a metal organic chemical vapor deposition (MOCVD) reactor manufactured by Aixtron.[1][2]

How it works

The Aixtron G 5 is a MOCVD reactor that uses a planetary reactor architecture.[2][3]

The G 5 employs a warm-ceiling design to minimize heat flux through the wafers and reduce wafer curvature due to temperature gradients.[2]

Where it fits in the process flow

General reference — not yet source-verified

In a typical compound semiconductor process flow, the MOCVD reactor follows substrate preparation and precedes subsequent patterning, etching, and metallization steps.

Applications

The Aixtron G 5 is used for the deposition of gallium nitride (GaN) and related III-Nitride compound semiconductor layers.[2]

The G 5 is also suitable for epitaxial growth for power electronics devices.[3]

What do the numbers mean?

Power & electrical5

Voltage
208V/120V AC[1]
Accurate?
Phase
3 Phase[1]
Accurate?
Frequency
60 Hz[1]
Accurate?
Power Supply
208V/120V AC, 3-phase, 60 Hz[1]
Accurate?
Electrical (specific unit)
208V/120V AC, 3 Phase, 60 Hz[1]
Accurate?

Wafer handling6

Wafer Size
4 inch[1]
Accurate?
Substrate Material
SiC (Silicon Carbide)[1]
Accurate?
Wafer Size (specific unit)
4 inch[1]
Accurate?
Substrate (AIX G5+ C)
Si/Sapphire/SiC, 150/200 mm[2]
Accurate?
Wafer Handling (AIX G5+ C)
Cassette-to-cassette[2]
Accurate?
Wafer Handling (AIX G5 WW C)
Cassette-to-cassette, hot wafer transfer[3]
Accurate?

Gas & chemistry2

Process Type
Metal Organic Chemical Vapor Deposition (MOCVD)[1]
Accurate?
Process Type
MOCVD (Metal Organic Chemical Vapor Deposition)[1]
Accurate?

Configuration & options8

SiC[1]
Accurate?
Vintage Year
2014[1]
Accurate?
Material (specific unit)
SiC[1]
Accurate?
Vintage (specific unit)
2014[1]
Accurate?
Configuration (AIX G5+ C)
8x150 mm or 5x200 mm[2]
Accurate?
Reactor Type (AIX G5+ C)
Planetary reactor with Cl2 in-situ cleaning[2]
Accurate?
Configuration (AIX G5 WW C)
8x150 mm[3]
Accurate?
Reactor Type (AIX G5 WW C)
Planetary reactor[3]
Accurate?

Vintage & configurations

Documented models & variants

DesignationGenerationVintageChangesSource
AIX G5+ C——Optimized for GaN applications on 150/200 mm substrates with Cl2 in-situ cleaning and 5x200 mm or 8x150 mm configuration.aixtron.com[2]
AIX G5 WW C——Optimized for SiC power electronics with hot wafer transfer and 8x150 mm configuration.aixtron.com[3]
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What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

  • Voltage208V/120V AC[1]
  • Phase3 Phase[1]
  • Frequency60 Hz[1]
  • Process TypeMetal Organic Chemical Vapor Deposition (MOCVD)[1]
  • Power Supply208V/120V AC, 3-phase, 60 Hz[1]
  • Process TypeMOCVD (Metal Organic Chemical Vapor Deposition)[1]
  • Electrical (specific unit)208V/120V AC, 3 Phase, 60 Hz[1]

Where are the manuals?

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

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Frequently asked questions

What gas-phase deposition class does the machine belong to?

The machine belongs to the metal organic chemical vapor deposition class.[1]

Not publicly documented

The following facts about the G 5 MOCVD Reactor are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the G 5 MOCVD Reactor are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • The control-system platform and OS era of the G 5 MOCVD Reactor are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • No publicly documented failure modes or field errata for the G 5 MOCVD Reactor are on record.

    Answerable by: a field service engineer, process engineer, or maintenance technician

  • The process node or technology generation of the G 5 MOCVD Reactor is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

  • No publicly documented compatible parts, consumables, or accessories for the G 5 MOCVD Reactor are on record.

    Answerable by: an OEM parts catalog or a service engineer

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Sources & citations

Sources (3)Every fact above is drawn from these public sources
  1. [1]Inventory photo
  2. [2]aixtron.com — aixtron.comaixtron.com
  3. [3]aixtron.com — aixtron.comaixtron.com
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Last updated Sep 30, 2026.

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