Applied Materials
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An ion implanter generates a beam of dopant ions, accelerates it to a controlled energy, and scans it across the wafer surface to achieve a uniform implanted dose.
The ion beam is mass-analyzed to select only the desired ion species before acceleration.
Ion implantation is a core doping step in semiconductor fabrication, used after photolithography and before annealing.
The process follows pattern definition and precedes a thermal anneal step that activates the implanted dopants and repairs crystal damage.
Ion implanters are used to introduce dopant impurities into silicon wafers to form p-type or n-type regions.
Common applications include the formation of source and drain regions, well implants, channel-stop implants, and threshold-voltage adjustments in CMOS devices.
2002 vintage
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The following facts about the 80 XR Leap II Ion are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
Fewer than 3 independently cited specifications for the 80 XR Leap II Ion are on record; the remainder await public documentation.
Answerable by: an OEM datasheet, a cleanroom equipment inventory, or an engineer who operated or installed it
No publicly documented variants, configuration options, or revision breakpoints of the 80 XR Leap II Ion are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the 80 XR Leap II Ion are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the 80 XR Leap II Ion are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the 80 XR Leap II Ion is not on record.
Answerable by: an OEM datasheet or a fab qualification report
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Last updated Oct 4, 2026.
The Varian 0216 7696, E 11368072 ESC is an electrostatic chuck (ESC) platen of the ADV-S type, categorized under ion implantation equipment.
The Varian 160 XP is an ion implanter. A variant, the Varian 160 XP Ion, is configured as a 150 mm high-current implanter.
The Varian 160 XP Ion is an ion implantation tool configured as a 150mm high-current implanter.