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Applied Materials

80 XR Leap II Ion

Provisional entry — research in progress

This page was generated automatically from cited public sources and hasn't completed the full research pass yet. Every specification shown carries its source; more detail is added as research completes.

80 XR Leap II Ion — Inventory photo
Fig. 0180 XR Leap II IonInventory photo[1]

What it is

The Applied Materials 80 XR Leap II Ion is an ion implanter for semiconductor wafer processing.[1]

How it works

General reference — not yet source-verified

An ion implanter generates a beam of dopant ions, accelerates it to a controlled energy, and scans it across the wafer surface to achieve a uniform implanted dose.

The ion beam is mass-analyzed to select only the desired ion species before acceleration.

Where it fits in the process flow

General reference — not yet source-verified

Ion implantation is a core doping step in semiconductor fabrication, used after photolithography and before annealing.

The process follows pattern definition and precedes a thermal anneal step that activates the implanted dopants and repairs crystal damage.

Applications

General reference — not yet source-verified

Ion implanters are used to introduce dopant impurities into silicon wafers to form p-type or n-type regions.

Common applications include the formation of source and drain regions, well implants, channel-stop implants, and threshold-voltage adjustments in CMOS devices.

What do the numbers mean?

Wafer handling1

Wafer size
8 inch[1]
Accurate?

Vintage & configurations

  1. 2002Manufacture year[1]

    2002 vintage

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Where are the manuals?

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

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Not publicly documented

The following facts about the 80 XR Leap II Ion are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • Fewer than 3 independently cited specifications for the 80 XR Leap II Ion are on record; the remainder await public documentation.

    Answerable by: an OEM datasheet, a cleanroom equipment inventory, or an engineer who operated or installed it

  • No publicly documented variants, configuration options, or revision breakpoints of the 80 XR Leap II Ion are on record.

    Answerable by: an OEM product catalog or an engineer who ordered or specified the tool

  • The control-system platform and OS era of the 80 XR Leap II Ion are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • No publicly documented failure modes or field errata for the 80 XR Leap II Ion are on record.

    Answerable by: a field service engineer, process engineer, or maintenance technician

  • The process node or technology generation of the 80 XR Leap II Ion is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

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Sources & citations

Sources (1)Every fact above is drawn from these public sources
  1. [1]Equipment inventory listing
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Last updated Oct 4, 2026.

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