Applied Materials

PLAD

Ion Implantation Applied Materials PLAD family

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Provisional entry — research in progress

This page was generated automatically from cited public sources and hasn't completed the full research pass yet. Every specification shown carries its source; more detail is added as research completes.

Applied Materials PLAD is an ion implantation tool. Applied Materials PLAD uses plasma doping for ion implantation. Applied Materials PLAD is used for p-type and n-type doping and for material modification.^[1]^[2]

Fig. — Manufacturer logo, not a photo of this toolWikimedia Commons (see file page for license)

What it is

Applied Materials PLAD is an ion implantation tool.^[3]^[1]

How it works

The PLAD class of tool uses plasma doping for ion implantation.^[2]^[1]

The plasma doping configuration associated with the PLAD family uses an inductively coupled RF ion source, a backside helium-cooled platen, pulsed negative DC bias, and electrostatic clamping.^[2]

Where it fits in the process flow

Applied Materials PLAD sits in the wafer doping portion of semiconductor fabrication.^[3]^[1]

Applications

The PLAD platform is used for p-type and n-type doping and for material modification.^[2]

The PLAD platform has been associated with ion implantation work across device types.^[2]

What do the numbers mean?

Wafer handling1

Wafer size: 300 mm^[2]

Configuration & options4

Manufacturer: Applied Materials^[1]
Model: PLAD^[1]
Category: Ion Implantation^[1]
Tool type: Plasma Doping Ion Implanter^[2]2 sources

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Where are the manuals?

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Not publicly documented

Field notes

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Frequently asked questions

How does plasma doping differ from conventional beamline ion implantation?General reference — not yet source-verified

Beamline ion implantation uses a well-collimated, mass-analyzed ion beam to implant a specific dopant species, typically at higher energies and lower doses for deeper profiles. Plasma doping uses a dense plasma with the substrate biased to accelerate ions from the entire plasma onto the wafer, enabling very low energy, high-dose, and conformal doping into three-dimensional structures, but without mass separation—so all ions from the plasma are implanted.

Which dopant materials can be used with plasma doping systems?General reference — not yet source-verified

Common dopant gases include diborane (B₂H₆) for boron doping, phosphine (PH₃) for phosphorus doping, and arsine (AsH₃) for arsenic doping. Other elements such as indium or antimony are also possible if suitable precursor gases are available.

Not publicly documented

The following facts about the PLAD are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the PLAD are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the PLAD are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the PLAD are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the PLAD are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the PLAD is not on record.
Answerable by: an OEM datasheet or a fab qualification report