Mattson
Provisional entry — research in progress
This page was generated automatically from cited public sources and hasn't completed the full research pass yet. Every specification shown carries its source; more detail is added as research completes.
The Mattson Aspen III is a plasma processing platform that supports both 200mm and 300mm wafers. The Aspen III Highlands performs low-k cleaning and high-dose implant resist removal using proprietary ICP technology with dual-wafer processing. The Aspen III CVD deposits silane-based and TEOS-based films and processes up to 180 wafers per hour.[1][2]
The Aspen III Highlands is specifically designed for low-k cleaning and high-dose implant resist removal. The Aspen III CVD system deposits films such as oxide, oxynitride, nitride, and TEOS-based oxide, used as antireflective coatings, etch stop layers, passivation layers, intermetal dielectric underlayers, low-temperature capping layers, and low-k fluorosilicate glass layers. The platform's dual-wafer processing and modular design allow it to be integrated into high-volume manufacturing lines.[1][2]
The Aspen III CVD system deposits silane-based films (oxide, oxynitride, nitride) and TEOS-based oxide films. Applications include antireflective coating layers for improved critical dimension control, etch stop layers for low-k integration, passivation layers, intermetal dielectric underlayers, low-temperature capping layers, and low-k FSG layers. The system can process up to 180 wafers per hour for selected film types, enabling high productivity in volume manufacturing.[2]
| Designation | Generation | Vintage | Changes | Source |
|---|---|---|---|---|
| Aspen III Highlands | — | — | Advanced 200/300mm system for low-k cleaning and high-dose implant resist removal; proprietary ICP technology; dual-wafer processing; modular design allowing added process modules | web.archive.org[1] |
| Aspen III CVD | — | 1999 | Plasma enhanced chemical vapor deposition; 200/300mm bridge tool using same chamber for both wafer sizes; up to 180 wafers per hour; deposits silane-based and TEOS-based films | web.archive.org[2] |
Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.
No research found yet — worked with this tool? Share what you know.
The following facts about the Aspen III are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the Aspen III are on record.
Answerable by: OEM historical records or a trade-press announcement
The control-system platform and OS era of the Aspen III are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the Aspen III are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the Aspen III is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No publicly documented compatible parts, consumables, or accessories for the Aspen III are on record.
Answerable by: an OEM parts catalog or a service engineer
No research found yet — worked with this tool? Share what you know.
Last updated Oct 1, 2026.