Waferpedia

Nikon

S 207 D

LithographyNikon S 207 D family
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S 207 D — Inventory photo
Fig. 01S 207 DInventory photo[1]

What it is

The Nikon S 207 D is a lithography stepper used in semiconductor pattern transfer.[1]

The Nikon S 207 D is a KrF scanner with a loader chamber, an amplifier unit, a temperature control unit, a heat exchanger, a Cymer laser, a front inline transfer, a control rack, and an illumination unit.[1]

How it works

General reference — not yet source-verified

A lithography stepper aligns a reticle or mask to a wafer and projects the pattern onto a photoresist-coated surface using optical exposure.

A KrF lithography tool uses deep ultraviolet light to form circuit patterns on the wafer through repeated exposure steps across the substrate.

Where it fits in the process flow

General reference — not yet source-verified

The Nikon S 207 D sits in the front-end lithography segment of semiconductor fabrication, where it patterns layers before etching, deposition, and other downstream process steps.

The Nikon S 207 D serves volume wafer patterning work that follows photoresist coating and alignment and precedes resist development and subsequent pattern transfer steps.

What do the numbers mean?

Wafer handling2

Loader chamber[1]
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Front inline transfer[1]
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Optics & imaging3

Cymer laser[1]
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Illumination unit[1]
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Laser
Cymer laser[1]
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Control & software2

Temperature control unit[1]
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Control rack die + Control rack[1]
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Configuration & options8

KrF Scanner[1]
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FFU[1]
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BMU[1]
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Amplifier unit[1]
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Heat exchanger[1]
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Accessories[1]
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Type
KrF Scanner[1]
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Vintage
2004[1]
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Where are the manuals?

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Not publicly documented

Field notes

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Frequently asked questions

How does the stepper achieve alignment between layers?General reference — not yet source-verified

Steppers use through-the-lens (TTL) or off-axis alignment systems that detect alignment marks on the wafer and reticle. The system calculates the offset and adjusts the wafer stage or reticle position (fine stage) to ensure each field is exposed precisely relative to previous layers. The alignment accuracy is typically in the nanometer range, though exact numbers vary by model and process.

What is the typical throughput of a stepper in a production environment?General reference — not yet source-verified

Throughput depends on exposure field size, resist sensitivity, stage acceleration, and overlay requirements. In general, steppers can process many wafers per hour under optimal conditions, but the exact number is influenced by process-specific parameters such as number of exposures per wafer and alignment time.

Not publicly documented

The following facts about the S 207 D are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the S 207 D are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • No publicly documented variants, configuration options, or revision breakpoints of the S 207 D are on record.

    Answerable by: an OEM product catalog or an engineer who ordered or specified the tool

  • The control-system platform and OS era of the S 207 D are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • No publicly documented failure modes or field errata for the S 207 D are on record.

    Answerable by: a field service engineer, process engineer, or maintenance technician

  • The process node or technology generation of the S 207 D is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

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Sources & citations

Sources (2)Every fact above is drawn from these public sources
  1. [1]Inventory photo
  2. [2]Nikon Precision Inc — nikonprecision.com (Aug 13, 2006)web.archive.org
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Last updated Oct 3, 2026.

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